Details, datasheet, quote on part number: BF1204
CategoryDiscrete => Transistors => Bipolar => RF => Small signal
TitleSmall signal
DescriptionBF1204; Dual N-channel Dual Gate MOS-FET;; Package: SOT363 (UMT6)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1204 datasheet
Cross ref.Similar parts: BG3130
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Features, Applications

FEATURES Two low noise gain controlled amplifiers in a single package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 9 V supply voltage, such as digital and analog television tuners and professional communications equipment. DESCRIPTION The is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. PINNING - SOT363 PIN gate 1 (a) gate 2 gate 1 (b) drain (b) source drain (a)


Per MOS-FET; unless otherwise specified VDS ID Ptot yfs Cig1-s Crss NF Xmod Tj Note Ts is the temperature at the soldering point of the source lead. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2001 Apr 25 2 drain-source voltage drain current (DC) total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature fF dB dBV C

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS -65 - MIN.

Per MOS-FET; unless otherwise specified VDS IG1 IG2 Ptot Tstg Tj drain-source voltage drain current (DC) gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature mW C

THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 240 UNIT K/W


Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BF1205 Dual N-channel Dual Gate MOS-FET
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BF421L BF421L; BF423L; PNP High-voltage Transistors;; Package: SOT54 (SPT, E-1)
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BF423L BF421L; BF423L; PNP High-voltage Transistors;; Package: SOT54 (SPT, E-1)
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