Details, datasheet, quote on part number: BF1202R
PartBF1202R
CategoryDiscrete => Transistors => Bipolar => RF => Small signal
TitleSmall signal
DescriptionBF1202; BF1202R; BF1202WR; N-channel Dual-gate Polo MOS-FETs;; Package: SOT143B
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1202R datasheet
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Features, Applications

FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.

PINNING PIN DESCRIPTION source drain gate 2 gate 1

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Mar 29 MHz = 800 MHz input level for 40 dB AGC CONDITIONS MIN. TYP. MAX. UNIT fF dB dBV C

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS IG1 IG2 Ptot PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation BF1202R BF1202WR Tstg Tj Note Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s BF1202R BF1202WR PARAMETER thermal resistance from junction to soldering point storage temperature operating junction temperature Ts 113 C; note Ts 119 C; note 1 - CONDITIONS


 

Related products with the same datasheet
BF1202LDp
BF1202RLEp
BF1202WR
BF1202WRLE
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BF1202RLEp BF1202; BF1202R; BF1202WR; N-channel Dual-gate Polo MOS-FETs;; Package: SOT143B
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