Details, datasheet, quote on part number: BF1201WR
PartBF1201WR
CategoryDiscrete => Transistors => Bipolar => RF => Small signal
TitleSmall signal
DescriptionBF1201; BF1201R; BF1201WR; N-channel Dual-gate Polo MOS-FETs;; Package: SOT143B
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1201WR datasheet
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Features, Applications

FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.

PINNING PIN DESCRIPTION source drain gate 2 gate 1

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Mar 29 MHz = 400 MHz input level for 40 dB AGC CONDITIONS MIN. TYP. MAX. UNIT fF dB dBV C

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS IG1 IG2 Ptot PARAMETER drain-source voltage drain current (DC) gate 1 current gate 2 current total power dissipation BF1201R BF1201WR Tstg Tj Note Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s BF1201R BF1201WR PARAMETER thermal resistance from junction to soldering point storage temperature operating junction temperature Ts 113 C; note Ts 109 C; note 1 - CONDITIONS


 

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