Details, datasheet, quote on part number: BF1109WR
PartBF1109WR
CategoryDiscrete => Transistors => Bipolar => RF => Small signal
TitleSmall signal
DescriptionBF1109; BF1109R; BF1109WR; N-channel Dual-gate MOS-FETs;; Package: SOT143B
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1109WR datasheet
Cross ref.Similar parts: BF1009SW
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Features, Applications

Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08

FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier to 1 GHz Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.

PINNING PIN DESCRIPTION source drain gate 2 gate 1

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current (DC) total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and = 1 MHz = 800 MHz Tamb 80 C CONDITIONS MIN. TYP. MAX. UNIT fF dB dBV C

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS IG1 IG2 Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board. PARAMETER drain-source voltage drain current (DC) gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature Tamb 80 C; note 1


 

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