Details, datasheet, quote on part number: BF1108R
PartBF1108R
CategoryDiscrete => Transistors => Bipolar => RF => Small signal
TitleSmall signal
DescriptionBF1108; BF1108R; Silicon RF Switches;; Package: SOT143B
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1108R datasheet
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Features, Applications

FEATURES Specially designed for low loss RF switching to 1 GHz. APPLICATIONS Various RF switching applications such as: Passive loop through for VCR tuner Transceiver switching. DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. PINNING PIN Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA SYMBOL s21(on)2 s21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage CONDITIONS f 1 GHz VCS = 20 A; VDS 1 V CAUTION DESCRIPTION FET gate; diode anode diode cathode source; note 1 drain; note 1

Marking code: NHp. Marking code: NGp. 1 Top view

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL FET VDS VSD VDG VSG ID Diode VR IF Tstg Tj continuous reverse voltage continuous forward current drain-source voltage source-drain voltage drain-gate voltage source-gate voltage drain current PARAMETER

THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of FET gate and diode anode lead. STATIC CHARACTERISTICS 25 C unless otherwise specified. SYMBOL FET V(BR)GSS VGSoff IDSX IGSS RDSon Diode VF IR forward voltage reverse current nA A gate-source breakdown voltage gate-source pinch-off voltage drain-source leakage current gate cut-off current drain-source on-state resistance VDS = 0; IGS 0.1 mA VDS 20 A VGS -5 V; VDS 2 V VGS -5 V; VDS = 0 VGS A nA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PARAMETER CONDITIONS VALUE 250 UNIT K/W

thermal resistance from junction to soldering point note 1

 

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