Details, datasheet, quote on part number: BF1101WRNC
CategoryDiscrete => Transistors => Bipolar => RF => Small signal
TitleSmall signal
DescriptionBF1101; BF1101R; BF1101WR; N-channel Dual-gate MOS-FETs;; Package: SOT143B
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1101WRNC datasheet


Features, Applications

FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier to 1 GHz Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 7 V supply voltage, such as television tuners and professional communications equipment.

PINNING PIN DESCRIPTION source drain gate 2 gate 1

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 May 14 MHz = 800 MHz input level for 40 dB AGC CONDITIONS MIN. TYP. MAX. UNIT fF dB dBV C

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS IG1 IG2 Ptot Tstg Tj Note Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature Ts 110 C; note 1


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