Details, datasheet, quote on part number: 2N7002T
Part2N7002T
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel TrenchMOS FET
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.



Features
Logic level threshold compatible
Very fast switching
Surface-mounted package
TrenchMOS technology



Applications
Logic level translator
High-speed line driver
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2N7002T datasheet
Cross ref.Similar parts: IRLML2060, SN7002N, BSS138N, BSC030N03MS G, 2N7002ET1G
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PackagesSOT23 (SST3)
  

 

Features, Applications

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS technology

s Logic level translator s High-speed line driver
Table 1: Pin 2 3 Pinning Description gate (G) source (S) drain (D)

Table 2: Ordering information Package Name 2N7002T TO-236AB Description plastic surface mounted package; 3 leads Version SOT23 Type number

Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage peak gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp 25 °C Tsp = 25 °C; pulsed; tp 50 µs; pulsed; duty cycle 25 % Tsp = 25 °C; VGS 10 V; see Figure 2 and 3 Tsp = 100 °C; VGS 10 V; see Figure 2 Tsp = 25 °C; pulsed; tp 10 µs; see Figure 3 Tsp = 25 °C; see Figure 1 Conditions Tj 150 °C; RGS 20 k Min -65 Max Unit mA A

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Fig 1. Normalized total power dissipation as a function of solder point temperature
Fig 2. Normalized continuous drain current as a function of solder point temperature

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage


 

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