Details, datasheet, quote on part number: MPSA13RLRM
PartMPSA13RLRM
CategoryDiscrete => Transistors => Bipolar => Darlington
DescriptionSmall Signal Darlington Npn, Package: TO-92 (TO-226), Pins=3
CompanyON Semiconductor
DatasheetDownload MPSA13RLRM datasheet
Cross ref.Similar parts: MPSA13
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Features, Applications

Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value to +150 Unit Vdc mAdc mW mW/°C Watts mW/°C °C

Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W BASE 2 COLLECTOR 3

Collector­Emitter Breakdown Voltage (IC = 100 µAdc, = 0) Collector Cutoff Current (VCB= 30 Vdc, = 0) Emitter Cutoff Current (VEB= 10 Vdc, = 0) V(BR)CES ICBO IEBO 30 100 Vdc nAdc

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

(IC = 100 mAdc, VCE = 5.0 Vdc) Collector­Emitter Saturation Voltage (IC = 100 mAdc, = 0.1 mAdc) Base­Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)

Current­Gain ­ Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle fT = |hfe| S ftest. fT 125 MHz


 

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