Details, datasheet, quote on part number: BF393ZL1
PartBF393ZL1
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionTransistor Silicon Plastic NPN , Package: TO-92 (TO-226), Pins=3
CompanyON Semiconductor
DatasheetDownload BF393ZL1 datasheet
Cross ref.Similar parts: BF393, BF420RL1
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Features, Applications

Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value to +150 Unit Vdc mAdc mW mW/°C Watts mW/°C °C

Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W 2 BASE 1 EMITTER COLLECTOR 3

Collector­Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB =0) Collector­Base Breakdown Voltage (IC = 100 mAdc, = 0) Emitter­Base Breakdown Voltage (IE = 100 mAdc, = 0) Collector Cutoff Current (VCB = 200 Vdc, = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. V(BR)CEO 300 V(BR)CBO 300 V(BR)EBO 6.0 ICBO IEBO 0.1 µAdc Vdc

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Collector­Emitter Saturation Voltage (IC = 20 mAdc, = 2.0 mAdc) Base­Emitter Saturation Voltage (IC = 20 mAdc, = 2.0 mAdc) hFE 25 40 VCE(sat) VBE(sat) 2.0 Vdc

CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, = 20 MHz) Common Emitter Feedback Capacitance (VCB = 60 Vdc, = 1.0 MHz) fT 50 Cre 2.0 pF MHz

100 ms CURRENT LIMIT THERMAL LIMIT (PULSE CURVES = 25°C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 µs

Figure 5. Maximum Forward Bias Safe Operating Area

 

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