Details, datasheet, quote on part number: 2N6515RLRM
Part2N6515RLRM
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionHigh Voltage Transistors , Package: TO-92 (TO-226), Pins=3
CompanyON Semiconductor
DatasheetDownload 2N6515RLRM datasheet
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Features, Applications

Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage 2N6519, 2N6520 Base Current Collector Current ­ Continuous Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO to +150 mAdc mW mW/°C Watts mW/°C 2N6520 350 Unit Vdc

Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W

Collector­Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, = 0) Collector­Base Breakdown Voltage (IC = 100 µAdc, 0 ) Emitter­Base Breakdown Voltage (IE = 10 µAdc, 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Collector Cutoff Current (VCB = 150 Vdc, = 0) (VCB = 250 Vdc, = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, = 0) (VEB = 4.0 Vdc, = 0) ICBO 2N6517, 2N6520 IEBO 2N6517 2N6520 nAdc

(IC = 100 mAdc, VCE = 10 Vdc) Collector­Emitter Saturation Voltage (IC = 10 mAdc, = 1.0 mAdc) (IC = 20 mAdc, = 2.0 mAdc) (IC = 30 mAdc, = 3.0 mAdc) (IC = 50 mAdc, = 5.0 mAdc) Base­Emitter Saturation Voltage (IC = 10 mAdc, = 1.0 mAdc) (IC = 20 mAdc, = 2.0 mAdc) (IC = 30 mAdc, = 3.0 mAdc) Base­Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc)

Current­Gain ­ Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, = 20 MHz) Collector­Base Capacitance (VCB = 20 Vdc, = 1.0 MHz) Emitter­Base Capacitance (VEB = 0.5 Vdc, = 1.0 MHz) 2N6520 fT Ccb Ceb MHz pF

Turn­On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, = 50 mAdc, = 10 mAdc) Turn­Off Time (VCC = 100 Vdc, = 50 mAdc, = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff µs



 

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