Details, datasheet, quote on part number: 2N6508T
CategoryDiscrete => Thyristors => SCR (Silicon Controlled Rectifiers)
DescriptionSilicon Controlled Rectifiers , Package: TO-220, Pins=3
CompanyON Semiconductor
DatasheetDownload 2N6508T datasheet
Cross ref.Similar parts: 2N6508G, TYN625RG
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Features, Applications

Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Device Marking: Logo, Device Type, e.g., 2N6504, Date Code

Rating *Peak Repetitive OffState Voltage (Note 1.) (Gate Open, Sine Wave to 60 Hz, 2N6508 2N6509 On-State RMS Current (180 Conduction Angles; = 85C) Average On-State Current (180 Conduction Angles; = 85C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, = 100C) Forward Peak Gate Power (Pulse Width 1.0 s, = 85C) Forward Average Gate Power = 8.3 ms, = 85C) Forward Peak Gate Current (Pulse Width 1.0 s, = 85C) Operating Junction Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Symbol VDRM, VRRM IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ Tstg +150 A Watts 1 Watts YY = Year WW = Work Week Value Unit Volts

Preferred devices are recommended choices for future use and best overall value.

Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC TL Max 1.5 260 Unit C/W C

*Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) = 125C IDRM, IRRM A mA

*Forward OnState Voltage (Note 2.) (ITM 50 A) *Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, = 100 Ohms) *Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, = 100 Ohms, = 40C) Gate Non-Trigger Voltage (VAK = 12 Vdc, = 100 Ohms, = 125C) *Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) *Turn-On Time (ITM 25 A, IGT = 50 mAdc) Turn-Off Time (VDRM = rated voltage) (ITM 25 A) (ITM = 40C tgt = 40C VTM IGT VGT VGD IH s Volts mA Volts mA

Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform) *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. dv/dt 50 V/s

Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode

+ Voltage IDRM at VDRM Forward Blocking Region (off state)


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