Details, datasheet, quote on part number: HY51V18160C
CompanyNEC Electronics Inc.
DatasheetDownload HY51V18160C datasheet


Features, Applications


This family a 16M bit dynamic RAM organized x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access or 80ns) and refresh cycle(1K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai's advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability.


Y Fast Page mode operation Y Read-modify-write Capability Y LVTTL compatible inputs and outputs Y /CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability Y Max. Active power dissipation Speed 80 Y Refresh cycle Part number HY51V18160C HY51V16160C Refresh 1K 4K Normal 256ms 64ms SL-part 1K refresh 504mW 4K refresh 288mW Y JEDEC standard pinout Y 42-pin Plastic SOJ (400mil) 44/50-pin plastic TSOP-II (400mil) Y Single power supply 0.3V Y Early write or output enable controlled write Y Fast access time and cycle time Speed 70 80 tRAC 70ns 80ns tCAC 15ns 20ns tPC 45ns 50ns

This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of circuits described. No patent licences are implied Hyundai Semiconductor Rev. 10/Sep.97

Refresh Counter Row Decoder Row Predecoder (10/12)* Memory Array 1,048,576x16

Pin Name /RAS /CAS /WE /OE A0~A9 DQ0~DQ15 Vcc Vss NC Parameter Row Address Strobe Column Address Strobe Write Enable Output Enable Address Input (4K Refresh Product) Address Input (1K Refresh Product) Data In/Out Power (3.3V) Ground No Connection


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