Details, datasheet, quote on part number: CMOS-8LCX
CategoryASICs => Gate Array
TitleGate Array
Description3-v, 0.50-micron CMOS Gate Arrays Crosscheck Test Support
CompanyNEC Electronics Inc.
DatasheetDownload CMOS-8LCX datasheet


Features, Applications

NEC's 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high speeds. The device processing includes a true 3-volt, 0.5-micron (drawn) silicon-gate CMOS technology and three-layer metalization. This technology features channelless (sea-of-gates) architecture with an internal gate delay 131 ps (F/O = 0 mm). The PD658xx series of 3-volt CrossCheck-supported devices consists of 10 masters, offered in densities of 10K gates to 486K gates. Usable gates range from 32K gates to 389K gates. These gate arrays are ideal for use in engineering workstations, high-end PCs, mainframes and LAN products, where extensive integration and high speed are primary design goals. CMOS-8LCX gate arrays are also well-suited for all battery-operated applications where high performance and low power consumption are critical; and feasible only with a truly optimized 3-volt CMOS process.


Supports CrossCheck on-chip testability circuitry Internal gate delays 131 ps (F/O = 0 mm) Channelless, 0.50 m CMOS architecture Power (typ.) 0.80 (3.0V) Process technology designed for 3V operation I/Os interface directly to 5V logic 48mA GTL I/O buffers are in development Phase Locked Loop (PLL) for chip-to-chip clock synchronization in development Automated generation of clock network for skew minimization High pad to gate ratio optimizes silicon usage Fully configurable high-speed RAM compiler Advanced package options include TAB/QFP, TQFP, PQFP, PGA and TAB Libraries characterized at 3V10% and 3.3V0.3V Variable output drive: 48 mA Slew-rate controlled output buffers Supports scan test methodology Single/Dual-Port RAM and ROM memory blocks

Actual gate utilitization may vary depending on circuit implementation. Utilization is 70% for three-layer metal. Depending on package and circuit specification, some pads are used for VDD and GND and are not available as signal pads.

CMOS-8LCX products are fully supported by NEC's advanced ASIC design technology. NEC's OpenCAD integration system lets the designer choose the most powerful design tools and services available. CMOS-8LCX gate arrays support automatic test generation through CrossCheck Technology's testability structures. This results in high fault coverage ATPT of synchronous and asynchronous designs with no netlist modifications and without designer involvement.

OpenCAD is a registered trademark of NEC Electronics Inc. CrossCheck is a registered trademark of CrossCheck Technology, Inc.

CMOS-8LCX products are built with NEC's 0.50-micron (drawn) channelless gate array architecture. As shown in figure 2, CMOS gate array chips are divided into I/O and internal cell areas. The I/O cell area contains input and output buffers that isolate the internal cells from high-energy external signals. The internal cell area is an array of basic cells, each composed of two p-channel MOS transistors and two n-channel MOS transistors, as well as four additional n-channel MOS transistors for compact RAM design. A cell configured as a two-input NAND gate is shown in figure 3. These p-channel and n-channel transistors are sized to offer a superb ratio of speed to silicon area.

Fast rise and fall times of CMOS output buffers can cause system noise and signal overshoot. When an unterminated line is being driven by a buffer, the maximum line length is determined by the rise and fall time of the output buffers and the round-trip signal delay of the line.

As a general rule, the round-trip delay of the line should not exceed the rise or fall time of the driving signal. Transmission lines that are longer than those determined by this rule can degrade system performance due to reflections and ringing. One benefit of slew-rate output buffers is that longer interconnections a PC board and routing flexibility are possible. ASIC designers, therefore, can slow down the output edge-rate by using a slew-rate output buffer and thus accommodate longer transmission lines on PC boards. Slew-rate buffers also inject less noise into the internal power and ground busses of the device, than their nonslew-rate counterparts. As a consequence, slew-rate buffers require fewer power/ground pairs for simultaneous switching outputs.

Figure 2. Chip Layout and Internal Cell Configuration

This data sheet contains preliminary specifications, package information, and operational data for the CMOS-8LCX gate array families. Additional design information will be available in NEC's CMOS-8LCX Block Library and CMOS-8LCX Design Manual. Contact your local NEC Design Center or the NEC Literature Center for further ASIC design information; see the back of this data sheet for locations and phone numbers.

Power supply voltage, DD 3V interface I/O voltage, VO 5V interface I/O voltage, , VO Latch-up current, I LATCH Operating temperature, TOPT Storage temperature, TSTG V to VDD V to VDD >1 A (typ) to +150C

VDD = 1 MHz Terminal Input Output I/O Symbol CIN COUT CI/O Typ 10 Max 20 Unit pF

Caution: Exposure to absolute maximum ratings for extended periods may affect device reliability; exceeding the ratings could cause permanent damage. The device should not be operated outside the recommended operating conditions.

Description Internal cell Input block (FI01) Output block Limits 10.0 0.181 Unit W/MHz mW/MHz

Parameter Power supply voltage Ambient temperature Low-level input voltage, 3V High-level input voltage, 3V Low-level input voltage, 5V High-level input voltage, 5V Input rise or fall time Input rise or fall time, Schmitt Positive Schmitt-trigger voltage Negative Schmitt-trigger voltage Hysteresis voltage Symbol VDD TA VIL VIH VIL V IH tR, tF tR, VN VH Min VDD TBD Max +85 0.3 VDD 0.8 VPP 200 10 TBD Unit ms V

Parameter Toggle frequency Delay time, 2-input NAND gate Standard gate (F302) tPD 131 243 Low power gate 149 371 Delay time, buffer Input (FI01) Output (FO06) Output rise time (FO06) Output fall time (FO06) tPD tF ns F/O mm @ VDD pF @ VDD pF @ VDD pF @ VDD 3.3V ps F/O 0 mm F/O 1 mm F/O 0 mm F/O 1 mm Symbol fTOG Min 175 Typ Max Unit MHz Conditions D -F/F; F/O = 2


Some Part number from the same manufacture NEC Electronics Inc.
CMOS-8LH 3.3-v, 0.5-micron CMOS Gate Arrays
CMOS-8LHD 3.3-volt, 0.5-micron CMOS Gate Arrays
CMOS-9 3.3-v, 0.35-micron CMOS Gate Arrays
CMOS-9HD 3.3-v, 0.35-micron (drawn) CMOS Gate Array
CMOS-N5Family 0.5 um CMOS Gate Array
EA-C10 2.5- Volt, 0.25-micron (drawn) CMOS Embedded Array
EA-C9 3.3-volt, 0.35-micron (drawn) CMOS Embedded Array
EA2-12 Compact And Lightweight
EB2 Compact And Light Weight Surface Mounting Type

EP1-4L4 : Twin Relay For Motor And Solenoid Reversible Control

EP1S-B4G1T : Low Sound Pressure

MC-458CA726LFA-A10 : 64M-byte(8M-word X 72-bit) Sdram Dimm

MR301-12HU : Twin Relay For Motor And Solenoid Reversible Control

RD15E : 500 MW DHD Zener Diode Do-35

UPD6125AG-XXX : ic For Programmable Infrared Remote Control Transmitter

UPD77110 : 16-bit Fixed-point Digital Signal Processors

UPD784035YGC-XXX-3B9 : CISC->uPD 16/8-bit Single-chip Microcontrollers

UPD784927GF : 16-bit Single-chip Microcontroller

UPG2405T6Q-E2 : 1 W SP3T Switch

UPD780228GF-XXX-3BA : 8-bit Single-chip Microcontroller

UPD444016LG5-A10-7JF : 4m-bit CMOS FAST SRAM 256k-word BY 16-bit

Same catergory

74LVC377D : 74LVC377; Octal D-type Flip-flop With Data Enable; Positive-edge Trigger;; Package: SOT163 (SO20).

MBR3035WT : 35V 30A Schottky Discrete Diode in a TO-247AC Package. I F(AV) Rectangular waveform (Per Device) I FRM C= 125C (Per Leg) VRRM I FSM 5 s sine @ 20 Apk, = 125C range 150 C The MBR30.WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation 150 C junction temperature. Typical applications.

SR5 : Wirewound Resistors, Open Air, Current Sense, Low Value. Wirewound Resistors, Open Air, Current Sense, Low Value Open air design Low resistance values for all types of current sensing, voltage division and pulse applications including switching and linear supplies, instrumentation and power amplifiers All welded construction Solid metal nickel-chrome or copper-nickel alloy resistive element Solderable terminations.

FWIXFPED0QE000 : Advanced 8-port 10/100 Mbps PHY Transceivers. The Intel LXT9785 and Intel LXT9785E are 8-port Fast Ethernet PHY Transceivers supporting IEEE 802.3 physical layer applications at 10 Mbps and 100 Mbps. These devices provide Serial/Source Synchronous Serial Media Independent Interfaces (SMII/SS-SMII) and Reduced Media Independent Interface (RMII) for switching and other independent port applications.

EC70-3C81 : EC Cores and Accessories. CORE SETS Effective core parameters SYMBOL (I/A) Ie Ae Amin m PARAMETER core factor (C1) effective volume effective length effective area minimum area mass of core half VALUE UNIT mm2 g 1. Measured in combination with an equal gapped core half (symmetrical air gap). Properties of core sets under power conditions B (mT) at GRADE = 250 A/m; = 25 kHz;.

S3F828B : 8-bit CMOS Microcontrollers. The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products.

6017 : Single Pole, Double Throw Connectorized Switches. SINGLE POLE, DOUBLE THROW CONNECTORIZED SWITCHES High performance wideband switches that feature fast switching speed and/or high power handling and low distortion. Hermetic, military/industrial design. PART # TYPE FREQ RANGE GHZ LOSS dB ISO dB VSWR SWITCH SPEED ns RF POWER dBm DC SUPPLY Volts s Operating Temperature: +125C s Storage Temperature: +150C.

TL432AIDBVRE4 : Adjustable Precision Shunt Regulators. 0.5%. B Grade 1%. A Grade - 2%. Standard Grade Typical Temperature Drift mV (C Temp) mV (I Temp, Q Temp) Low Output Noise 0.2- Typical Output Impedance Sink-Current Capability. 100 mA Adjustable Output Voltage. Vref 36 V TL431B. P (PDIP), PS (SOP), OR PW (TSSOP) PACKAGE (TOP VIEW) - No internal connection Pin 2 is attached to Substrate and must be connected.

C0805C391K4RACTU : 390pF Ceramic Capacitor 0805 (2012 Metric) 16V; CAP CER 390PF 16V 10% X7R 0805. s: Capacitance: 390pF ; Voltage - Rated: 16V ; Tolerance: 10% ; Package / Case: 0805 (2012 Metric) ; Temperature Coefficient: X7R ; Packaging: Tape & Reel (TR) ; : - ; Lead Spacing: - ; Operating Temperature: -55C ~ 125C ; Mounting Type: Surface Mount, MLCC ; Lead.

430004 : CABLE STRIPPER. Brand Product Range Catalogue number Date Range Cable stripper Dual purpose wire stripper and plastic tube cutting tool fast and flexible Cuts and removes insulation from cable, solid conductors and standard wire - quick and safe Automatically changes from circular to longitudinal cuts Adjustable cutting depth Cuts plastic tubing to 25mm diameter.

MWS61M : Static Protection Wrist Strap w/ 6-ft. Cord. s: Wrist Band Type: Adjustable ; Circumference Max: - ; Body Material: Nylon ; Lead Length: 6ft ; Color: Maroon ; Approval Bodies: - ; Ground Terminals: Snap.

6835W5102001 : Gold Through Hole D-sub Connectors, Interconnect Plug, Male Pins; CONN MALE COAX 5W5 DIP SLD TIN. s: Connector Type: Plug, Male Pins ; Contact Finish: Gold ; : - ; Flange Feature: Housing/Shell (Unthreaded) ; Mounting Type: Through Hole ; Number of Positions: 5 ; Number of Rows: 1 ; Termination: Solder ; Contact Finish Thickness: Flash ; Connector Style:.

CA3102R20-8PF80 : Aluminum, Olive Drab Cadmium Plated Panel Mount, Flange Circular Connectors, Interconnect Receptacle, Male Pins; CONN RCPT 6 POS BOX MNT W/PINS. s: Connector Type: Receptacle, Male Pins ; Shell Size - Insert: 20-8 ; Mounting Type: Panel Mount, Flange ; Fastening Type: Threaded ; : - ; Packaging: Bulk ; Number of Positions: 6 ; Termination: Crimp ; Shell.

8-1879213-9 : 249 Ohm 0.063W, 1/16W Chip Resistor - Surface Mount; RES 249 OHM 1/16W 0.1% 0402. s: Resistance (Ohms): 249 ; Power (Watts): 0.063W, 1/16W ; Tolerance: 0.1% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 25ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

KO130RA126 : SPDT Keylock Switch 4A @ 125VAC; SWITCH KEYLOCK SPDT 4A 90DEG. s: Actuator Type: Flat Key ; Angle of Throw: 90 ; Circuit: SPDT ; Contact Rating @ Voltage: 4A @ 125VAC ; Key Removable Positions: 3 and 5 ; Mounting Type: Panel Mount ; Number of Positions: 2 ; Termination Style: Solder Lug ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

08T3002JF : THERM NTC 30K OHM 5% 30 AWG RAD -; THERM NTC 30K OHM 5% 30 AWG RAD. s: Resistance in Ohms @ 25C: 30K ; B25/50: - ; B25/85: - ; B25/100: - ; B0/50: - ; Operating Temperature: - ; Resistance Tolerance: 5% ; B Value Tolerance: - ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

SFH620-1G : 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER. s: Mounting Option: PLASTIC, DIP-4 ; Input: AC ; Forward Current: 0.0500 amps ; Output: Phototransistor ; Isolation Voltage: 5300 volts ; Collector Emitter Breakdown Voltage: 70 volts ; Operating Temperature: -55 to 100 C (-67 to 212 F) ; Approvals: RoHS.

1N2461R : 70 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB. s: Configuration: Single ; Package: DO-5, DO-5, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 70000 mA ; VRRM: 200 volts.

42-3570-10TL : DIP42, IC SOCKET. s: Product Type: IC Socket ; RoHS Compliant: RoHS Compliant ; Socket Type: DIP ; Contact Plating: TIN LEAD (200) OVER NICKEL ; Number of Contacts: 42.

0-C     D-L     M-R     S-Z