Details, datasheet, quote on part number: MCM6249
Description1m x4 Bit Static Random Access Memory
CompanyMotorola Semiconductor Products
DatasheetDownload MCM6249 datasheet
Find where to buy


Features, Applications

The a 4,194,304 bit static random access memory organized as 1,048,576 words of 4 bits, fabricated using high­performance silicon­gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. The MCM6249 is equipped with chip enable (E) and output enable (G) pins, allowing for greater system flexibility and eliminating bus contention problems. Either input, when high, will force the outputs into high impedance. The MCM6249 is available a 400 mil, 32­lead surface­mount SOJ package. Single ± 10% Power Supply Fast Access Time: 20/25/35 ns Equal Address and Chip Enable Access Time All Inputs and Outputs are TTL Compatible Three­State Outputs Power Operation: 190/175/160 mA Maximum, Active AC

DQ0 INPUT DATA CONTROL DQ0 E COLUMN I/O COLUMN DECODER ­ A19. Address Inputs W. Write Enable G. Output Enable E. Chip Enable ­ DQ3. Data Input/Output NC. No Connection VCC. 5 V Power Supply VSS. Ground

Mode Not Selected Output Disabled Read Write I/O Pin High­Z Dout High­Z Cycle Read Write Current ISB1, ISB2 ICCA

Rating Power Supply Voltage Relative to VSS Voltage Relative to VSS for Any Pin Except VCC Output Current (per I/O) Power Dissipation Temperature Under Bias Operating Temperature Symbol VCC Vin, Vout Iout PD Tbias TA Value 0.5 to VCC + 70 Unit W °C This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to these high impedance circuits. This CMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained.

Storage Temperature Plastic Tstg 150 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.


Parameter Supply Voltage (Operating Voltage Range) Input High Voltage Input Low Voltage * VIL (min) 0.5 V dc; VIL (min) V ac (pulse width 2.0 ns). Symbol VCC VIH VIL Min Typ 5.0 Max 5.5 VCC 0.3 0.8 Unit V

Parameter Input Leakage Current (All Inputs, Vin 0 to VCC) Output Leakage Current (E = VIH, Vout 0 to VCC) Output Low Voltage (IOL + 8.0 mA) Output High Voltage (IOH ­ 4.0 mA) Symbol Ilkg(I) Ilkg(O) VOL VOH Min 2.4 Max Unit µA V

Parameter AC Active Supply Current (Iout = 0 mA, VCC = max) AC Standby Current (VCC = max, E = VIH, No other restrictions on other inputs) MCM6249­20: tAVAV ns MCM6249­25: tAVAV ns MCM6249­35: tAVAV ns MCM6249­20: tAVAV ns MCM6249­25: tAVAV ns MCM6249­35: tAVAV 35 ns Symbol ICC Min Typ Max Unit mA

CMOS Standby Current (E VCC 0.2 V, Vin VSS V or VCC 0.2 V) (VCC = max, = 0 MHz)
CAPACITANCE = 1.0 MHz, = 25°C, Periodically Sampled Rather Than 100% Tested)

Parameter Input Capacitance Input/Output Capacitance All Inputs Except Clocks and DQs W DQ Symbol Cin Cck CI/O Typ 4 5 Max 6 8 Unit pF

Input Pulse Levels. 3.0 V Input Rise/Fall Time. 2 ns Input Timing Measurement Reference Level. 1.5 V Output Timing Measurement Reference Level. 1.5 V Output Load. See Figure 1a

MCM6249­20 Parameter Read Cycle Time Address Access Time Enable Access Time Output Enable Access Time Output Hold from Address Change Enable Low to Output Active Output Enable Low to Output Active Enable High to Output High­Z Output Enable High to Output High­Z Power Up Time Power Down Time Symbol tAVAV tAVQV tELQV tGLQV tAXQX tELQX tGLQX tEHQZ tGHQZ tELICCH tEHICCL Min Max MCM6249­25 Min Max MCM6249­35 Min Max Unit ns Notes 2, 3

NOTES: W is high for read cycle. 2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con­ tention conditions during read and write cycles. 3. All read cycle timings are referenced from the last valid address to the first transitioning address. 4. Addresses valid prior to or coincident with E going low/E going high. 5. At any given voltage and temperature, tEHQZ max tELQX min, and tGHQZ max tGLQX min, both for a given device and from device to device. 6. Transition is measured 500 mV from steady­state voltage with load of Figure 1b. 7. This parameter is sampled and not 100% tested. 8. Device is continuously selected (E VIL, G VIL).

= 50 OUTPUT 1.5 V OUTPUT pF 480 The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the system must supply at least that much time. On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time.


Related products with the same datasheet
Some Part number from the same manufacture Motorola Semiconductor Products
MCM6249WJ20 1m x4 Bit Static Random Access Memory
MCM6264C 8k X 8 Bit Fast Static RAM
MCM6265C 8k X 9 Bit Fast Static RAM
MCM62963A 4k X 10 Bit Synchronous Static RAM
MCM62973A 4k X 12 Bit Synchronous Static RAM
MCM62Y308 Synchronous Line Buffer:8k X 8 Bit Fast Static Dual Ported Memory
MCM6323A 64k X 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323ATS10A 64K X 16 Bit 3,3V Asynchronous Fast Static RAM
MCM6323ATS10R 64k X 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323ATS12A 64K X 16 Bit 3,3V Asynchronous Fast Static RAM
MCM6323ATS12R 64k X 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323ATS15A 64K X 16 Bit 3,3V Asynchronous Fast Static RAM
MCM6323ATS15R 64k X 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323AYJ10A 64K X 16 Bit 3,3V Asynchronous Fast Static RAM

1N4690 : 500 Milliwatts Glass Silicon Zener Diode, Zener Voltage 5.6V

MC33066DW : High Performance Resonant Mode Controller

MC68HC711KA2CFU4 : 8-Bit Microcontroller (M68HC11 CPU), 32 Kbytes OtPROM, 4 MHZ

MC908MR8MDWR2 : M68HC08 Family MC68HC908MR8 Technical Data

MCM72F9 :

XPC860SRCZP50D4 : 68K/ColdFire->68K M683XX MC68160A Enhanced Ethernet Transceiver

MCIMX253DVM4 : I.MX25 Applications Processor For Consumer And Industrial Products The i.MX25 multimedia applications processor has the right mix of high performance, low power, and integration to support the growing needs of the industrial and general embedded markets. At the core of the i.MX25 is Fre

S9S08DV16F1MLF : Hcs08 Microcontrollers

56F8013_07 : 16-bit Digital Signal Controllers

PPC5706CEMLQ : Microcontroller

MC13201_07 : 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard

MC68882RC20 : Hcmos Enhanced Floating-point Coprocessor

Same catergory

723631 : 512 X 36 Syncfifo, 5.0V. Output Ready (OR) and Almost-Empty (AE) flags synchronized by CLKB Available in 132-pin plastic quad flat package (PQFP) or spacesaving 120-pin thin quad flat package (TQFP) Industrial temperature range +85°C) is available Storage capacity: x 36 Supports clock frequencies to 67 MHz Fast access times of 11ns Free-running CLKA and CLKB can be asynchronous.

72V285 : 64K X 18 Supersync Fifo, 3.3V. Choose among the following memory organizations: x 18 Pin-compatible with the IDT72V255/72V265 SuperSync FIFOs 10ns read/write cycle time (6.5ns access time) Fixed, low first word data latency time Auto power down minimizes standby power consumption Master Reset clears entire FIFO Partial Reset clears data, but retains programmable settings Retransmit.

GLT5160L16 : . u Single ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address) u CAS latency- / 3 (programmable) u Burst length- Full Page (programmable) u Burst type- sequential / interleave (programmable) u Industrial grade available.

K4D263238D : ->Graphics Memory. = K4D263238D 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ;; Organization = 4Mx32 ;; Vdd/Vddq(V) = 2.5/2.5 ;; Speed(ns) = 4.0,5.0 ;; Refresh = 4K/32ms ;; Package = 100TQFP ;; Interface = SSTL_2 ;; Production Status = Mass Production ;; Comments = -.

K4E640411C : = K4E640411C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ;; Organization = 16Mx4 ;; Mode = Edo ;; Voltage(V) = 5 ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; Package = 32SOJ,32TSOP2 ;; Power = Normal ;; Production Status = Eol ;; Comments = -.

KMM372F213CK : Buffered DIMM. = KMM372F213CK 2Mx72 DRAM Dimm With Ecc Using 2Mx8,2K Refresh,3.3V ;; Density(MB) = - ;; Organization = 2Mx72 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (2Mx8)x9+Drive ICx2 ;; Production Status = Eol ;; Comments = Ecc.

LH28F320BFHG-PBTLZL : 32M Bottom Boot Block Flash.

M28LV64 : 64 Kb. Obsolete - 64K (8K X 8) Low Voltage Parallel EePROM With Software Data Protection.

M374S1623ET0 : Unbuffered DIMM. = M374S1623ET0 16Mx72 Sdram Dimm With Ecc Based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition = (8Mx8)x18+EEPROM ;; Production Status = Eol ;; Comments.

MB81F12842 : CMOS 4-bank X 4,194,304-word X 8 Bit Synchronous Dynamic Random Access Memory.

T15N1024A : SRAM. Density = 1M ;; Org. = 128KX8 ;; Voltage = 2.4-3.6V ;; Speed(ns) = 55/70/100 ;; Stadby Current = 5uA ;; Pins/package = 32pin-SOJ,32pin-TSOP-I,48pin-CSP.

TMS28F800ALT12BDCDE : ti TMS28F800ALT, 1 048 576 BY 8-Bit, 524 288 BY 16-Bit Autoselect Boot Block Flash Memory.

K4S280832F : The K4S280832F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every.

CY7C183-20JC : 8K X 16 CACHE SRAM, 20 ns, PQCC52. s: Memory Category: SRAM Chip ; Density: 131 kbits ; Number of Words: 8 k ; Bits per Word: 16 bits ; Package Type: PLASTIC, LCC-52 ; Pins: 52 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 20 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).


MSM514400D-60JS : 1M X 4 FAST PAGE DRAM, 60 ns, PDSO20. s: Memory Category: DRAM Chip ; Density: 4194 kbits ; Number of Words: 1000 k ; Bits per Word: 4 bits ; Package Type: SOJ, 300 MIL, 1.27 MM PITCH, PLASTIC, SOJ-26/20 ; Pins: 20 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 60 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

MT8HTF3264HD-40EXX : 32M X 64 DDR DRAM MODULE, DMA200. s: Memory Category: DRAM Chip ; Density: 2147484 kbits ; Number of Words: 32000 k ; Bits per Word: 64 bits ; Package Type: SODIMM-200 ; Pins: 200 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Operating Temperature: 0 to 70 C (32 to 158 F).

MX25V512COI-20G : FLASH 2.7V PROM. s: Memory Category: Flash, PROM. GENERAL Serial Peripheral Interface compatible Mode 0 and Mode x 1 bit structure 16 Equal Sectors with 4K byte each - Any Sector can be erased individually Single Power Supply Operation to 3.6 volt for read, erase, and program operations Latch-up protected to 100mA from -1V to Vcc +1V PERFORMANCE High Performance - Fast access time: 50MHz serial clock.

W26B041B70LI : 256K X 16 STANDARD SRAM, 70 ns, PBGA48. s: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: TFBGA-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 3V ; Access Time: 70 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

W3DG63126V10D2F : 128M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168. s: Memory Category: DRAM Chip ; Density: 8589935 kbits ; Number of Words: 128000 k ; Bits per Word: 64 bits ; Package Type: LEAD FREE, DIMM-168 ; Pins: 168 ; Supply Voltage: 3.3V ; Access Time: 6 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

0-C     D-L     M-R     S-Z