Details, datasheet, quote on part number: MCM6206BBEJ25
Description32k X 8 Bit Fast Static RAM
CompanyMotorola Semiconductor Products
DatasheetDownload MCM6206BBEJ25 datasheet
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Features, Applications

The a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functionality and pinout, and is available in plastic small­outline J­leaded packages. Single ± 10% Power Supply Fully Static No Clock or Timing Strobes Necessary Fast Access Times: 12/15/20/25 ns Equal Address and Chip Enable Access Times Output Enable (G) Feature for Increased System Flexibility and to Eliminate Bus Contention Problems Low Power Operation: 140 mA Maximum AC Fully TTL Compatible Three State Output

A A. Address Input DQ. Data Input/Data Output W. Write Enable G. Output Enable E. Chip Enable VCC. Power Supply 5 V) VSS. Ground

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. 6/4/97

Mode Not Selected Output Disabled Read Write VCC Current ISB1, ISB2 ICCA Output High­Z Dout High­Z Cycle ­ Read Cycle Write Cycle

Rating Power Supply Voltage Relative to VSS For Any Pin Except VCC Output Current Power Dissipation Temperature Under Bias Ambient Temperature Symbol VCC Vin, Vout Iout PD Tbias TA Value 0.5 to VCC + 70 Unit W °C This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high­impedance circuit. This CMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained.

Storage Temperature--Plastic Tstg 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.


Parameter Supply Voltage (Operating Voltage Range) Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min Typ 5.0 Max 5.5 VCC 0.3** 0.8 Unit V

* VIL (min) 0.5 V dc; VIL (min) V ac (pulse width 20 ns) VIH (max) = VCC 0.3 V dc; VIH (max) = VCC V ac (pulse width 20 ns)

Parameter Input Leakage Current (All Inputs, Vin 0 to VCC) Output Leakage Current (E = VIH G = VIH, Vout 0 to VCC) Output High Voltage (IOH ­ 4.0 mA) Output Low Voltage (IOL = 8.0 mA) Symbol Ilkg(I) Ilkg(O) VOH VOL Min 2.4 Max ±1 0.4 Unit µA V

Parameter AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax) AC Standby Current (E = VIH, VCC = Max, f = fmax) CMOS Standby Current (VCC = Max, = 0 MHz, E VCC 0.2 V Vin VSS V, or VCC 0.2 V) Symbol ICCA ISB1 ISB2 Unit mA

CAPACITANCE = 1 MHz, = 25°C, Periodically sampled rather than 100% tested)

Characteristic Address Input Capacitance Control Pin Input Capacitance (E, G, W) I/O Capacitance Symbol Cin CI/O Max 6 8 Unit pF

Input Timing Measurement Reference Level. 1.5 V Input Pulse Levels. 3.0 V Input Rise/Fall Time. 5 ns Output Timing Measurement Reference Level. 1.5 V Output Load. Figure 1 Unless Otherwise Noted

­ 12 Parameter Read Cycle Time Address Access Time Enable Access Time Output Enable Access Time Output Hold from Address Change Enable Low to Output Active Enable High to Output High­Z Output Enable Low to Output Active Output Enable High to Output High­Z Power Up Time Power Down Time Symbol tAVAV tAVQV tELQV tGLQV tAXQX tELQX tEHQZ tGLQX tGHQZ tELICCH tEHICCL Min Max Min Max Min Max Min Max Unit ns Notes 2

NOTES: W is high for read cycle. 2. All timings are referenced from the last valid address to the first transitioning address. 3. Addresses valid prior to or coincident with E going low. 4. At any given voltage and temperature, tEHQZ (max) is less than tELQX (min), and tGHQZ (max) is less than tGLQX (min), both for a given device and from device to device. 5. Transition is measured ±500 mV from steady­state voltage. 6. This parameter is sampled and not 100% tested. 7. Device is continuously selected (E = VIL, G = VIL).

= 50 OUTPUT 1.5 V The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the system must supply at least that much time. On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time.


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