Details, datasheet, quote on part number: CA3102
CategoryAnalog & Mixed-Signal Processing
DescriptionDual High Frequency Differential Amplifier For Low Power Applications up to 500MHz
CompanyIntersil Corporation
DatasheetDownload CA3102 datasheet
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Features, Applications

Dual High Frequency Differential Amplifier For Low Power Applications to 500MHz

The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise and a value fT in excess of 1GHz. These features make the CA3102 useful from to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility. The monolithic construction of the CA3102 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual channel applications where matched performance of the two channels is required. The CA3102 has a separate substrate connection for greater design flexibility.


Power Gain 23dB (Typ). 200MHz Noise Figure 4.6dB (Typ). 200MHz Two Differential Amplifiers on a Common Substrate Independently Accessible Inputs and Outputs Full Military Temperature Range. to 125oC


VHF Amplifiers VHF Mixers Multifunction Combinations - RF/Mixer/Oscillator; Converter/IF IF Amplifiers (Differential and/or Cascode) Product Detectors Doubly Balanced Modulators and Demodulators Balanced Quadrature Detectors

PART NUMBER (BRAND) CA3102M (3102) TEMP. RANGE (oC) to 125 PACKAGE 14 Ld PDIP 14 Ld SOIC PKG. NO. E14.3 M14.15

Cascade Limiters Synchronous Detectors Balanced Mixers Synthesizers Balanced (Push-Pull) Cascode Amplifiers Sense Amplifiers

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved

Collector-to-Emitter Voltage, V CEO. 15V Collector-to-Base Voltage, VCBO. 20V Collector-to-Substrate Voltage, VCIO (Note 1). 20V Emitter-to-Base Voltage, VEBO. 5V Collector Current, IC. 50mA

PDIP Package. 110 SOIC Package. 205 Maximum Power Dissipation (Any One Transistor). 300mW Maximum Junction Temperature (Plastic Package). 150oC Maximum Storage Temperature Range. to 150oC Maximum Lead Temperature (Soldering 10s). 300oC (SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES: 1. The collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. The substrate (Terminal 9) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. JA is measured with the component mounted on an evaluation PC board in free air.

DC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER Input Offset Voltage (Figures 1, 4) Input Offset Current (Figure 1) Input Bias Current (Figures 1, 5) Temperature Coefficient Magnitude of Input Offset Voltage VIO IIO µA µ V/oC

V IO ---------------T DC CHARACTERISTICS FOR EACH TRANSISTOR DC Forward Base-to-Emitter Voltage (Figure 6) Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) Collector Cutoff Current (Figure 7) Collector-to-Emitter Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage VBE V BE -------------T ICBO V(BR)CEO V(BR)CBO V (BR)CIO V (BR)EBO VCE = 1mA VCE = 1mA

VCB = 1mA VCE = 0, VCB = 0, VCI = 2mA Bias Voltage = -6V Bias Voltage = 10MHz Note 3 Note 4

DYNAMIC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER 1/f Noise Figure (For Single Transistor) (Figure 12) Gain Bandwidth Product (For Single Transistor) (Figure 11) Collector-Base Capacitance (Figure NF fT CCB dB GHz pF dB

Collector-Substrate Capacitance (Figure 8) Common Mode Rejection Ratio AGC Range, One Stage (Figure 2) Voltage Gain, Single-Ended Output (Figures 9, 10)

PARAMETER Insertion Power Gain (Figure 3) Noise Figure (Figure 3) Input Admittance = 25oC (Continued) SYMBOL NF Y11 TEST CONDITIONS VCC = 12V, for Cascode Configuration = 2mA. For Diff. Amp. Configuration = 4mA (Each Collector = 200MHz Cascode (Figures 16, 18) Diff. Amp. (Figures 17, 19) Cascode Diff. Amp. Forward Transfer Admittance Y21 Cascode (Figures 28, 30) Diff. Amp. (Figures 29, 31) Output Admittance Y22 Cascode (Figures 22, 24) Diff. Amp. (Figures 23, 25) NOTES: 3. Terminals 1 and or 7 and 8. 4. Terminals 13 and or 6 and 11. MIN TYP + j0.62 MAX UNITS dB mS


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