Details, datasheet, quote on part number: CA3083
CategoryDiscrete => Transistors => Bipolar => Bipolar Array => General Purpose
TitleGeneral Purpose
DescriptionGeneral Purpose High Current NPN Transistor Array
CompanyIntersil Corporation
DatasheetDownload CA3083 datasheet
Cross ref.Similar parts: CA3183AE, CA3183E
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Features, Applications

General Purpose High Current NPN Transistor Array

The is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e., 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistor plus a separate terminal for the substrate permit maximum flexibility in circuit design.


High IC. 100mA (Max) Low VCE sat (at 50mA). 0.7V (Max) Matched Pair (Q1 and Q2) - VIO (VBE Match). 5mV (Max) - IIO (at 1mA). 2.5A (Max) 5 Independent Transistors Plus Separate Substrate Connection


Signal Processing and Switching Systems Operating from DC to VHF Lamp and Relay Driver Differential Amplifier Temperature Compensated Amplifier Thyristor Firing See Application Note AN5296 "Applications of the CA3018 Circuit Transistor Array" for Suggested Applications

PART NUMBER (BRAND) CA3083M96 (3083) TEMP. RANGE (oC) to 125 PACKAGE 16 Ld PDIP 16 Ld SOIC 16 Ld SOIC Tape and Reel PKG. NO. E16.3 M16.15

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright Intersil Corporation 1999

The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage, VCEO. 15V Collector-to-Base Voltage, VCBO. 20V Collector-to-Substrate Voltage, VCIO (Note 1). 20V Emitter-to-Base Voltage, VEBO. 5V Collector Current (IC). 100mA Base Current (IB). 20mA

Thermal Resistance (Typical, Note 2) JA (oC/W) JC (oC/W) PDIP Package. 135 N/A SOIC Package. 200 N/A Maximum Power Dissipation (Any One Transistor). 500mW Maximum Junction Temperature (Plastic Package). 150oC Maximum Storage Temperature Range. to 150oC Maximum Lead Temperature (Soldering 10s). 300oC (SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES: 1. The collector of each transistor of the CA3083 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate Terminal (5) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. JA is measured with the component mounted on an evaluation PC board in free air.


Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-Cutoff-Current DC Forward-Current Transfer Ratio (Note 3) (Figure 1)


Base-to-Emitter Voltage (Figure 2) Collector-to-Emitter Saturation Voltage (Figures 3, 4) Gain Bandwidth Product

FOR TRANSISTORS Q1 AND Q2 (As a Differential Amplifier) Absolute Input Offset Voltage (Figure 6) Absolute Input Offset Current (Figure 7) NOTE: 3. Actual forcing current is via the emitter for this test. |VIO| |IIO| VCE = 1mA VCE mV A



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