Details, datasheet, quote on part number: IRFU3411
PartIRFU3411
CategoryDiscrete
Description100V Single N-channel HexFET Power MOSFET in a D-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFU3411 datasheet
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Features, Applications

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels to 1.5 watts are possible in typical surface mount applications.

= 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) LD LS Ciss Coss Crss EAS

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy

Min. Typ. Max. Units Conditions 100 V VGS 250A 0.12 V/C Reference 44 m VGS 4.0 V VDS = VGS 21 S VDS 16A 25 VDS = 100V, VGS A 250 VDS = 80V, VGS 150C 100 VGS nA -100 VGS 14 nC VDS 14 21 VGS = 10V, See Fig. 6 and 13 11 VDD 5.1 35 VGS = 10V, See Fig. 10 Between lead, nH G from package 7.5 and center of die contact 1960 VGS 0V 250 VDS = 1.0MHz, See Fig. 185 mJ IAS = 1.5mH

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Conditions D MOSFET symbol 33 showing the A G integral reverse 110 S p-n junction diode. = 16A, VGS 760 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

max. junction temperature. (See fig. 11) Starting = 25, IAS = 16A. (See Figure 12) ISD 16A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.

This is a typical value at device destruction and represents

* When mounted on 1" square PCB or G-10 Material). For recommended footprint dering techniques refer to application note #AN-994.



 

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