Details, datasheet, quote on part number: IRFU3410
PartIRFU3410
CategoryDiscrete
Description100V Single N-channel HexFET Power MOSFET in a D-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFU3410 datasheet
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Features, Applications

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current

Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 2.0 Typ. 0.11 34 Max. Units Conditions V VGS = 250A V/C Reference 39 m VGS 4.0 V VDS = VGS, 250A 20 VDS = 100V, VGS A 250 VDS = 80V, VGS 150C 200 VGS nA -200 VGS = -20V

gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 33 Typ. Max. Units Conditions S VDS 18A nC VDS = 50V VGS = 10V, VDD = 9.1 VGS = 10V VGS = 0V VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS to 80V

EAS IAR Single Pulse Avalanche Energy Avalanche Current

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 31 showing the A G integral reverse 125 S p-n junction diode. = 18A, VGS 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



 

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