Details, datasheet, quote on part number: IRFU3303
PartIRFU3303
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description30V Single N-channel HexFET Power MOSFET in a D-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFU3303 datasheet
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Features, Applications

Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels to 1.5 watts are possible in typical surface mount applications.

= 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

RDS(on) VGS(th) gfs IDSS I GSS gd t d(on) tr t d(off) LD LS Ciss Coss Crss

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Max. Units Conditions V VGS = 250A V/C Reference 1mA 0.031 VGS 4.0 V VDS = VGS, 250A S VDS 18A 25 VDS = 30V, VGS A 250 VDS = 24V, VGS nA -100 VGS 7.3 nC VDS 24V 13 VGS = 10V, See Fig. 6 and 13 VDD = 0.8, See Fig. 10 Between lead, nH G from package and center of die contact VGS 0V pF VDS = 1.0MHz, See Fig. 5

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 33 showing the A G integral reverse 120 p-n junction diode. = 18A, VGS 140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes: Pulse width 300s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting = 590H Caculated continuous current based on maximum allowable junction 25 , IAS = 18A. (See Figure 12) temperature; Package limitation current = 20A. ISD 18A, di/dt 140A/s, VDD V(BR)DSS, This is applied for I-PAK, LS of D-PAK is measured between TJ 150C lead and center of die contact When mounted on 1" square PCB or G-10 Material For recommended footprint and soldering techniques refer to application note #AN-994



 

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