Details, datasheet, quote on part number: IRFU2405
PartIRFU2405
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description55V Single N-channel HexFET Power MOSFET in a D-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFU2405 datasheet
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Features, Applications

Surface Mount (IRFR2405) l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description

Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels to 1.5 watts are possible in typical surface mount applications.

= 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

* When mounted on 1" square PCB or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) LD LS Ciss Coss Crss Coss eff.

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance

Typ. Max. Units Conditions V VGS 250A 0.052 V/C Reference 0.0118 0.016 VGS 4.0 V VDS 250A S VDS 34A 20 VDS = 55V, VGS A 250 VDS = 44V, VGS 150C 200 VGS nA -200 VGS 23 nC VDS 19 29 VGS 10V 15 VDD 6.8 78 VGS 10V D Between lead, nH G from package 7.5 and center of die contact S 2430 VGS 470 pF VDS = 1.0MHz, See Fig. 5 2040 VGS = 0V, VDS 1.0MHz 350 VGS = 0V, VDS 1.0MHz 350 VGS = 0V, VDS to 44V

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 56 showing the A G integral reverse 220 S p-n junction diode. = 34A, VGS 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting = 25, IAS = 34A. ISD 34A, di/dt 190A/s, VDD V(BR)DSS, TJ 175C

Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A



 

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