Details, datasheet, quote on part number: IRFU120Z
PartIRFU120Z
Category
Description100V Single N-channel HexFET Power MOSFET in a I-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFU120Z datasheet
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Features, Applications

Features

Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

= 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM

PD @TC = 25C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested )

Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds Mounting Torque, or M3 screw

V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) LD LS Ciss Coss Crss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance

IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

MOSFET symbol showing the integral reverse p-n junction diode. = 5.2A, VGS = 5.2A, VDD = 50V di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


 

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