Details, datasheet, quote on part number: IRFU1205
PartIRFU1205
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description55V Single N-channel HexFET Power MOSFET in a D-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFU1205 datasheet
Cross ref.Similar parts: HUF75329D3, STD60NF55L-1
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Features, Applications

Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels to 1.5 watts are possible in typical surface mount applications.

= 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) LD LS Ciss Coss Crss

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min. Typ. Max. Units Conditions 250A 0.055 V/C Reference 1mA 0.027 VGS 4.0 V VDS = VGS, 17 S VDS 25A 25 VDS = 55V, VGS A 250 VDS = 44V, VGS 150C 100 VGS 12 nC VDS 44V 27 VGS = 10V, See Fig. 6 and 13 7.3 VDD = 1.1, See Fig. 10 Between lead, (0.25in.) G from package 7.5 and center of die contact 1300 VGS 410 pF VDS = 1.0MHz, See Fig. 5

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 44 showing the A G integral reverse 160 p-n junction diode. = 22A, VGS 240 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

max. junction temperature. ( See fig. 11 ) VDD = 25V, starting = 25, IAS = 25A. (See Figure 12)

Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable junction This is applied for I-PAK, Ls of D-PAK is measured between lead and

center of die contact temperature; Package limitation current = 20A

When mounted on 1" square PCB or G-10 Material For recommended footprint and soldering techniques refer to application note #AN-994



 

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