Details, datasheet, quote on part number: IRFSL4710
PartIRFSL4710
CategoryDiscrete
Description100V Single N-channel HexFET Power MOSFET in a TO-220AB Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFSL4710 datasheet
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Features, Applications

Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current

= 100C IDM PD @TA 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, or M3 screw

RJC RCS RJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient are on page 11

Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 3.5 Typ. 0.11 0.011 Max. Units Conditions V VGS = 250A V/C Reference 1mA 0.014 VGS 5.5 V VDS = VGS, 250A 1.0 VDS = 95V, VGS A 250 VDS = 80V, VGS 150C 100 VGS nA -100 VGS = -20V

gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 35 Typ. Max. Units Conditions S VDS 45A nC VDS = 50V VGS = 10V, VDD = 4.5 VGS = 10V VGS = 0V VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS to 80V

EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 75 showing the A G integral reverse 300 S p-n junction diode. = 45A, VGS 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



 

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