Details, datasheet, quote on part number: IRFS59N10D
PartIRFS59N10D
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description100V Single N-channel HexFET Power MOSFET in a TO-220AB Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFS59N10D datasheet
Cross ref.Similar parts: PHB45NQ10T, STB40NF10LT4, HUF75639S3S, HUF75639S3ST, HUF76639S3S, HUFA75639S3S, HUFA75639S3ST, HUFA76639S3S, STB40NF10T4
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Features, Applications

Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current

= 100C IDM PD @TA 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, or M3 screw

Half-bridge and Full-bridge DC-DC Converters Full-bridge Inverters

Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 3.0 Typ. 0.11 Max. Units Conditions V VGS = 250A V/C Reference 1mA 0.025 VGS 5.5 V VDS = VGS, 250A 25 VDS = 100V, VGS A 250 VDS = 80V, VGS 150C 100 VGS nA -100 VGS = -30V

gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 18 Typ. Max. Units Conditions S VDS 36 nC VDS 80V 54 VGS = 10V, VDD = 2.5 VGS = 10V VGS = 0V VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS to 80V

EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy

RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 59 showing the A G integral reverse 236 S p-n junction diode. = 35.4A, VGS 1.1 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



 

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