Details, datasheet, quote on part number: IRFS11N50ATRL
PartIRFS11N50ATRL
CategoryDiscrete
Description500V Single N-channel HexFET Power MOSFET in a D2-Pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFS11N50ATRL datasheet
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Features, Applications

Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching

Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001)

= 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Two Transistor Forward Half & Full Bridge Power Factor Correction Boost

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Max. Units Conditions V VGS = 250A V/C Reference 1mA 0.52 VGS 4.0 V VDS = VGS, 250A 25 VDS = 500V, VGS A 250 VDS = 400V, VGS 125C 100 VGS nA -100 VGS = -30V

gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 6.1 Typ. Max. Units Conditions S VDS 13 nC VDS 400V 18 VGS = 10V, See Fig. 6 and 13 VDD = 22 ,See Fig. 10 VGS = 0V VDS = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS to 400V

EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy

RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 11 showing the A G integral reverse 44 S p-n junction diode. = 11A, VGS 5.1 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



 

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