Details, datasheet, quote on part number: IRFRU9120N
PartIRFRU9120N
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionPower MOSFET ( Vdss=-100v, RDS ( on ) =0.48ohm, Id=-6.6a )
CompanyInternational Rectifier Corp.
DatasheetDownload IRFRU9120N datasheet
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Features, Applications

Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels to 1.5 watts are possible in typical surface mount applications.

= 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -2.0 1.4 Typ. Max. Units Conditions V VGS = -250µA V/°C Reference -1mA 0.48 VGS -4.0 V VDS = VGS, -250µA S VDS -4.0A -25 VDS = -100V, VGS µA -250 VDS = -80V, VGS 150°C 100 VGS nA -100 VGS 5.0 nC VDS -80V 15 VGS = -10V, See Fig. 6 and 13 VDD =12 , See Fig. 10 D Between lead, nH G from package and center of die contact S VGS 0V pF VDS = 1.0MHz, See Fig. 5

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Conditions D MOSFET symbol -6.6 showing the A G integral reverse -26 p-n junction diode. = -3.9A, VGS 630 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

max. junction temperature. ( See fig. 11 ) Starting = 25, IAS = -3.9A. (See Figure 12) ISD -4.0A, di/dt 300A/µs, VDD V(BR)DSS, TJ 150°C

Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between

When mounted on 1" square PCB or G-10 Material For recommended footprint and soldering techniques refer to application note #AN-994



 

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