Details, datasheet, quote on part number: IRFR9N20DTRR
PartIRFR9N20DTRR
CategoryDiscrete
Description200V Single N-channel HexFET Power MOSFET in a D-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFR9N20DTRR datasheet
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Features, Applications

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current

= 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 V VGS 250A 0.23 V/C Reference 1mA 0.38 VGS 5.5 V VDS = VGS, 250A 25 VDS = 200V, VGS A 250 VDS = 160V, VGS 150C 100 VGS nA -100 VGS = -30V

gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 4.3 Typ. Max. Units Conditions S VDS 7.1 nC VDS 160V 14 VGS = 10V, VDD = 11 VGS = 10V VGS = 0V VDS = 1.0MHz VGS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS to 160V

EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy

RJC RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Conditions D MOSFET symbol 9.4 showing the A G integral reverse 38 S p-n junction diode. = 5.6A, VGS 560 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



 

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