Details, datasheet, quote on part number: GA400TD25S
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts
TitleLow Voltage < 600 Volts
DescriptionStandard Speed Igbt
CompanyInternational Rectifier Corp.
DatasheetDownload GA400TD25S datasheet
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Features, Applications


Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies to 10kHz Very low conduction and switching losses HEXFREDTM antiparallel diodes with ultra- soft recovery Industry standard package UL approved

Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing

VCES = 25C ICM ILM IFM VGE VISOL 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Q Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range

RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal & 3S Weight of Module

V(BR)CES VCE(on) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 250 VGE = 1mA Collector-to-Emitter Voltage 1.3 1.6 VGE 1.3 V VGE = 125C Gate Threshold Voltage = 3.0mA VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, = 2.5mA gfe Forward TransconductanceT 371 S VCE = 400A ICES Collector-to-Emitter Leaking Current 0.50 mA VGE = 0V, VCE 250V 20 VGE = 0V, VCE = 125C VFM Diode Forward Voltage - Maximum = 500A, VGE = 125C IGES Gate-to-Emitter Leakage Current 500 nA VGE = 20V

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres trr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units Conditions 2400 VCC = 400A VCC = 150V VGE 15V mJ See Fig.17 through Fig.21 52 VGE 0V pF VCC = 1 MHz = 0 A/s VCC 150V di/dt1400A/s


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