Details, datasheet, quote on part number: GA200TD120U
PartGA200TD120U
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => High Voltage 1200 Volts <
TitleHigh Voltage 1200 Volts <
DescriptionUltra-fast (tm) Speed Igbt
CompanyInternational Rectifier Corp.
DatasheetDownload GA200TD120U datasheet
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Features, Applications

Features

Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Very low conduction and switching losses HEXFREDTM antiparallel diodes with ultra- soft recovery Industry standard package UL approved

Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing

VCES = 25C ICM ILM IFM VGE VISOL 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching Current, Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range

RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal S Weight of Module

Min. Typ. Max. Units Conditions 1200 VGE 2.3 3.1 VGE 2.1 V VGE = 125C Gate Threshold Voltage = 2.5mA VGE(th) DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, = 2.5mA gfe Forward TransconductanceT 261 S VCE = 200A ICES Collector-to-Emitter Leaking Current 2.0 mA VGE = 0V, VCE 1200V 20 VGE = 0V, VCE = 125C VFM Diode Forward Voltage - Maximum = 200A, VGE = 200A, VGE = 125C IGES Gate-to-Emitter Leakage Current 500 nA VGE = 20V V(BR)CES VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units Conditions 2490 VCC = 400V VGE = 200A VCC = 720V VGE mJ 130 VGE 0V pF VCC = 1 MHz = 0 A/s VCC 720V di/dt1294A/s



 

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