Details, datasheet, quote on part number: GA200NS61U
PartGA200NS61U
Category
Description600V Ultrafast 10-30 KHZ HS Chop S Igbt in a Int-a-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload GA200NS61U datasheet
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Features, Applications

Features

Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Very low conduction and switching losses HEXFREDTM antiparallel diodes with ultra- soft recovery Industry standard package UL approved

High Side Switch Chopper Module Ultra-FastTM Speed IGBT

Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing

VCES = 25C ICM ILM IFM VGE VISOL 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range

RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal Weight of Module

V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 VGE 1.8 2.2 VGE 1.9 V VGE = 125C Gate Threshold Voltage = 1.25mA Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, = 1.25mA Forward Transconductance 175 S VCE = 200A Collector-to-Emitter Leaking Current 1.0 mA VGE = 0V, VCE 600V 10 VGE = 0V, VCE = 125C Diode Forward Voltage - Maximum = 200A, VGE = 200A, VGE = 125C Gate-to-Emitter Leakage Current 250 nA VGE = 20V

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units Conditions 1355 VCC = 400V, VGE = 200A VCC = 360V VGE 15V mJ Inductive load 39 VGE 0V pF VCC = 1 MHz = 0 A/s VCC = 360V di/dt =1227A/s


Fig. 3 - Maximum Collector Current vs. Case Temperature
Fig. 4- Typical Collector-to-Emitter Voltage vs. Junction Temperature

 

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