Details, datasheet, quote on part number: GA150TD120U
PartGA150TD120U
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules
Description1200V Ultrafast 10-30 KHZ Half-bridge Igbt in a Dual Int-a-pak Package
CompanyInternational Rectifier Corp.
DatasheetDownload GA150TD120U datasheet
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Features, Applications

Features

Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies to 10kHz Very low conduction and switching losses HEXFREDTM antiparallel diodes with ultra- soft recovery Industry standard package UL approved

Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing

VCES I CM ILM IFM VGE VISOL 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range

RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal Weight of Module

V(BR)CES VCE(on) Parameter Min. Collector-to-Emitter Breakdown Voltage 1200 Collector-to-Emitter Voltage VGE(th) Gate Threshold Voltage 3.0 V GE(th)/ T J Temperature Coeff. of Threshold Voltage gfe Forward Transconductance ICES Collector-to-Emitter Leaking Current Diode Forward Voltage - Maximum VFM IGES Gate-to-Emitter Leakage Current Typ. Max. Units Conditions VGE 2.4 2.9 VGE 2.2 V VGE mA -11 mV/C VCE = VGE, 201 S VCE 2 mA VGE = 0V, VCE 1200V 20 VGE = 0V, VCE = 150A, VGE = 150A, VGE 500 nA VGE = 20V

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units Conditions 1709 VCC = 400V, VGE = 150A VCC = 720V VGE 15V mJ See Fig.17 through Fig.21 90 VGE 0V pF VCC = 1 MHz = 0 A/s VCC 720V di/dt=1260A/s



 

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GA150TS60U 600V Ultrafast 10-30 KHZ Half-bridge Igbt in a Int-a-pak Package
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