Details, datasheet, quote on part number: 2N7269
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionRepetitive Avalanche Rated And Dv/dt Rated HexFET Transistor: 200v, 26a
CompanyInternational Rectifier Corp.
DatasheetDownload 2N7269 datasheet
Find where to buy


Features, Applications

Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) IRHM8250 600K Rads (Si) RDS(on) ID 26A

International Rectifier's RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight

ID @ VGS ID @ VGS = 100C IDM = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page to 150

BVDSS Drain-to-Source Breakdown Voltage BV DSS/ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Input Capacitance Output Capacitance Reverse Transfer Capacitance

IS ISM VSD Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled LS + LD.
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient

Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics = 25C, Post Total Dose Irradiation

BVDSS VGS(th) IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area
Fig a. Single Event Effect, Safe Operating Area


Some Part number from the same manufacture International Rectifier Corp.
2N7334 Avalanche Energy And Dv/dt Rated
2N7335 4p Channel Power MOSFETs
2N7336 Combination H And P Channel (2 Each) Power MOSFETs
2N77221 Repetitive Avalanche Rated And Dv/dt Rated HexFET(r) N-channel Transistor: 400v, 10a
300CNQ035 35V 300A Schottky Common Cathode Diode in a TO-244AB Non-isolated Package
300HF Standard Recovery Diodes
300HF120M Standard Recovery Diode
300HF120PV 300HF120P
300HF40M Standard Recovery Diode

10RIA40 : 100V 10A Phase Control SCR in a TO-208AA (TO-48) Package

183NQ100R : 80V 180A Schottky Discrete Diode in a D-67 Half-pak Package

IRHF7230 : Repetitive Avalanche And Dv/dt Rated HexFET(r) Transistor 200v 5.5a

SD103R04S10MC : Fast Recovery Diode

B25DA120KLPBF : 39.25 A, 1200 V, SCR Specifications: VDRM: 1200 volts ; VRRM: 1200 volts ; IT(RMS): 39.25 amps ; IGT: 60 mA ; Pin Count: 4

IRFIZ24G-009PBF : 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.1000 ohms ; Number of units in IC: 1

IRFIZ48G-012PBF : 37 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0180 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1

IRKN56/06AS90PBF : 94.2 A, 400 V, SCR, TO-240AA Specifications: VDRM: 400 volts ; VRRM: 400 volts ; IT(RMS): 94.2 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: ADD-A-PAK-5 ; Pin Count: 5

OHD2812DF-SLV : 2-OUTPUT DC-DC REG PWR SUPPLY MODULE Specifications: Package Type: Other, 0.385 INCH HEIGHT, METAL, PACKAGE-10 ; Output Voltage: 12 volts ; Input Voltage: 28 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F)

5962-8949704MXC : DUAL OUTPUT, FIXED MIXED REGULATOR, CSFM5 Specifications: Regulator Type: Standard ; Output Voltage Type: Fixed ; Life Cycle Stage: ACTIVE ; Output Voltage: 11.64 to 12.36 volts ; IOUT: 1.5 amps ; VIN: 14.5 to 27 volts

Same catergory

2SD2280 : . Applications Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO and highly registant to breakdown. Micaless package facilitating easy mounting. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

EL02Z : . (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) (Common to backside of case) 1 Chip N.C Cathode (Common) Anode .

FQI3N60 : 600V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

MAC15SD : Triacs , Package: TO-220, Pins=3. Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. Sensitive Gate allows Triggering by Microcontrollers and other Logic Circuits High Immunity to dv/dt - 25 V/ms minimum at 110C High Commutating di/dt - 8.0 A/ms minimum.

MBRA120TR : 20V 1A Schottky Discrete Diode in a Sma Package. IFAV VRRM IFSM 5 s sine 1.0Apk, TJ=125C range Rect. Waveform C The MBRA120 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery.

RM35HG-34S : Super Fast Recovery Diode. : Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. : Non-Isolated Package Planar Chips trr = 300ns Max. Applications: Snubber Circuits Ordering Information: Example: Select the complete part number from the table below -i.e. 1700V, 35 Ampere Super Fast Recovery Single Diode Module. Absolute Maximum.

S1A : Surface Mount Rectifier. 1.0A Surface Mount Glass Passivated Rectifier.


CC03-220NJ : 1 ELEMENT, 0.22 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: ONE SURFACE ; Application: General Purpose, RF Choke ; Inductance Range: 0.2200 microH ; Inductance Tolerance: 5 (+/- %) ; DCR: 1.9 ohms ; Rated DC Current: 200 milliamps.

CLU : RESISTOR, POTENTIOMETER, 1 TURN(S), 2 W, 50 ohm - 5000000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: Panel Mount (Bushing), ROHS COMPLIANT ; Operating Temperature: -55 to 120 C (-67 to 248 F).

CT0805CS-680M : 1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: ONE SURFACE ; Application: General Purpose, RF Choke ; Inductance Range: 0.0680 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.3800 ohms ; Rated DC Current: 500 milliamps.

EY01AB415J02W : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 63 V, 1500 uF, CHASSIS MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 1500 microF ; Capacitance Tolerance: 30 (+/- %) ; WVDC: 63 volts ; Leakage Current: 570 microamps ; ESR: 83 milliohms ; Mounting Style: CHASSIS MOUNT ; Operating.

FHR2132 : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: SOT23, SOT-23, 3 PIN.

FMB49N20T2 : 49 A, 200 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0470 ohms ; PD: 1670 milliwatts ; Package Type: SMD,TPACK-3 ; Number of units in IC: 1.

LT5400AHMS8E-3PBF : RESISTOR, NETWORK, FILM. s: Configuration: Chip Array ; Category / Application: General Use.

PA0801.004 : 0.2 MHz - 0.7 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -40 to 125 C (-40 to 257 F).

PT61021 : DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

10PS122 : CAP,AL2O3,22UF,10VDC,20% -TOL,20% +TOL.

0-C     D-L     M-R     S-Z