Details, datasheet, quote on part number: 7014
Part7014
CategoryInterface and Interconnect => Multi-Ports
TitleMulti-Ports
Description4K X 9 Dual-port RAM
CompanyIntegrated Device Technology, Inc.
DatasheetDownload 7014 datasheet
Cross ref.Similar parts: CY7B139, CY7C139
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Features, Applications

The is a high-speed x 9 Dual-Port Static RAM designed to be used in systems where on-chip hardware port arbitration is not needed. This part lends itself to high-speed applications which do not rely on BUSY signals to manage simultaneous access. The IDT7014 provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. See functional description. The IDT7014 utilitizes a 9-bit wide data path to allow for parity at the user's option. This feature is especially useful in data communication applications where it is necessary to use a parity bit for transmission/ reception error checking. Fabricated using IDT's high-performance technology, these DualPorts typically operate on only 750mW of power at maximum access times as fast as 12ns. The IDT7014 is packaged a 52-pin PLCC and a 64-pin thin quad flatpack, (TQFP).

True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access ­ Commercial: 12/15/20/25ns (max.) ­ Industrial: 15/20/25ns (max.) Standard-power operation ­ IDT7014S Active: 750mW (typ.) Fully asynchronous operation from either port TTL-compatible; single 5V (±10%) power supply Available in 52-pin PLCC and a 64-pin TQFP Industrial temperature range +85°C) is available for selected speeds

NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. J52-1 package body in x.75 in. x.17 in. PN64-1 package body is approximately 1.4mm. 4. This package code is used to reference the package diagram. 5. This text does not indicate the orientation of the actual part-marking

Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Terminal Voltage Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial to +7.0 Unit V

NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited < 20mA for the period of VTERM > Vcc + 10%.

Symbol VCC GND VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min.
NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 10%.

DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) (VCC ± 10%)

7014S Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Test Conditions VCC = 5.5V, VIN V CC VOUT V CC IOL = +4mA IOH = -4mA Min.


 

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