Details, datasheet, quote on part number: W49V002FA
PartW49V002FA
CategoryMemory => Flash
Description256Kx8
CompanyInformation Storage Devices, Inc
DatasheetDownload W49V002FA datasheet
Cross ref.Similar parts: SST49LF002A-33-4C-NH, SST49LF002A
Quote
Find where to buy
 
  
Related products with the same datasheet
W49V002FAP
W49V002FAQ
Some Part number from the same manufacture Information Storage Devices, Inc
W49V002FAP 256Kx8
W523A008 Voice Synthesizer W/4 Triggers, 5 Stops, R0-R3, µC Interface, Pwm/dac (8 Sec)
W5280 Adpcm Synthesizer w/ 4 Triggers, Stpa, Stpb, Stpc, R0 (3 Seconds @8.0K) (ROMless Controller)
W53300 Voice/melody/lcd Controller w/ 16 Com X 48 Seg, up to 1K Notes Melody
W53322 Voice/melody/lcd Controller w/ 32 Com X 48 Seg, up to 1K Notes Melody
W536030A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536030P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536030T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536060A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536060P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536060T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536090A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536090P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536090T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536120A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536120P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536120T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536A031 MDPCM Voice/melody W/64x16 ~ 40x7 Lcd, 256x4x2 LCD RAM, 1/16 & 1/8 Duty, 1/4 & 1/5 Bias, 32Kx20ROM
W536Q020 MDPCM Voice/melody W/40x16 ~ 16x8 Lcd, 160x4x1 LCD RAM, 1/16 & 1/8 Duty, 1/4& 1/5 Bias, 16Kx20 ROM,
W541C20X 4-bit MCU W/2Kx16 ROM, 128x4 RAM, 21 I/Os, Int Inut, Serial I/o
W541C240 4-bit MCU W/24x4 ROM, 64x4 RAM, 13 I/Os, 24x4 LCD Driver

ISD33090P : Single-chip Voice Record/playback Devices

ISD33150P : Single-chip Voice Record/playback Devices

ISD33180ED : Single-chip Voice Record/playback Devices

ISD4002-120E : Single-chip Voice Record/playback Device With 120 Seconds Duration

ISD4004-12M : Single-chip Voice Record/playback Devices

W27E02Q-70 : 256Kx8

W27E512Q-90 : 64KX8

W541C240 : 4-bit MCU W/24x4 ROM, 64x4 RAM, 13 I/Os, 24x4 LCD Driver

W83977EF : W83877TF Plus Kbc, GP I/O, Wake-Up, Power Fail Resume

Same catergory

DP5Z1MM16 : Module/PCMCIA->16M Byte. 16 MB Flash EePROM (1mx16).

HY62LF16806A : Super Low Power Slow SRAM. 512Kx16bit Full CMOS SRAM. 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision 00 01 History Initial Draft Change Logo - Hyundai Hynix Change DC Parameter 5mA Change Data Retention - IccDR(LL) 25uA Change AC Parameter - tOE 15uA 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary This document is a general product and is subject to change without.

K3N4U1000D : 8M bit. = K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ;; Organization = 1Mx8,512Kx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package = 42DIP,44SOP,44TSOP2 ;; Current (mA/uA) = 25,30/30 ;; Production Status = Mass Production ;; Comments = Eol BY Dec. 03'.

KMM374S1623CT : Unbuffered DIMM. = KMM374S1623CT 16Mx72 Sdram Dimm With Ecc Based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 80,1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition = (8Mx8)x18+EEPROM ;; Production Status = Eol ;; Comments.

LRS1386 : FLASH/SRAM Combinations (Stacked Chip. 64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM.

M466S1723AT2 : SODIMM. = M466S1723AT2 16M X 64 Sdram Sodimm Based on 16M X 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 128 ;; Organization = 16Mx64 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 10 ;; #of Pin = 144 ;; Power = L,c ;; Component Composition = (16Mx8)x8+EEPROM ;; Production Status = Eol ;; Comments = PC66.

M470L6423EN0 : = M470L6423EN0 200Pin Unbuffered Sodimm Based on 256Mb E-die (x8) ;; Density(MB) = 512 ;; Organization = 64Mx64 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = CC,B3,A2,B0 ;; #of Pin = 200 ;; Power = C,l ;; Component Composition = (32Mx8)x8 ;; Production Status = Customer Sample ;; Comments = DDR400.

MX29F200B : Boot Sector Flash Memory. 5.0V10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active - 1uA typical standby current Command register architecture - Byte/Word Programming (7us/12us typical) - Erase 8K-Bytex2, 32K-Bytex1, and 64K-Byte x3) Auto Erase (chip) and Auto Program - Automatically.

NX25F011B-3V : 1-Mbit 4-pin Spi.

PSD935G2 : PSD(Programmable System Memories). Configurable Memory System on a Chip For 8-BIT Microcontrollers.

EN29LV640 : 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, The EN29LV640H/L / EN29LV640U is a 64-Megabit ( 4Mx16 ), electrically erasable, read/write nonvolatile flash memory. Any word can be programmed typically in 8μs. This device is entirely command set compatible with the JEDEC single-power-supply Flash standard..

FM28V100-TGTR : SPECIALTY MEMORY CIRCUIT, PDSO32. s: Density: 1049 kbits ; Number of Words: 128 k ; Bits per Word: 8 bits ; Package Type: TSOP, 8 X 13.40 MM, GREEN, TSOP1-32 ; Pins: 32 ; Supply Voltage: 3.3V ; Operating Temperature: -40 to 85 C (-40 to 185 F).

MX29LV160DBGBI-70G : 1M X 16 FLASH 3V PROM, 70 ns, PBGA48. s: Memory Category: Flash, PROM ; Density: 16777 kbits ; Number of Words: 1000 k ; Bits per Word: 16 bits ; Package Type: 6 X 4 MM, 0.50 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, MO-222, XFLGA-48 ; Pins: 48 ; Supply Voltage: 3V ; Access Time: 70 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

5962F15171QXA : 32K X 8 FLASH 3V PROM, 65 ns, DFP28. s: Memory Category: Flash, PROM ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: 0.490 X 0.740 INCH, 1.27 MM PITCH, FP-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 65 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

97SD3240RPME : 32M X 40 SYNCHRONOUS DRAM, 6 ns, QFP132. s: Memory Category: DRAM Chip ; Density: 1342177 kbits ; Number of Words: 32000 k ; Bits per Word: 40 bits ; Package Type: QFP, STACK, QFP-132 ; Pins: 132 ; Supply Voltage: 3.3V ; Access Time: 6 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

 
0-C     D-L     M-R     S-Z