Details, datasheet, quote on part number: W49L401
PartW49L401
CategoryMemory => Flash
Description256K-16
CompanyInformation Storage Devices, Inc
DatasheetDownload W49L401 datasheet
Cross ref.Similar parts: SST39LF400A
  
Related products with the same datasheet
W49L401S-70B
W49L401T
W49L401T-
W49L401T-70B
W49L401TS70B
W49L401TT70B
Some Part number from the same manufacture Information Storage Devices, Inc
W49L401S-70B 256K-16
W49V002A 256Kx8
W49V002FA
W523A008 Voice Synthesizer W/4 Triggers, 5 Stops, R0-R3, µC Interface, Pwm/dac (8 Sec)
W5280 Adpcm Synthesizer w/ 4 Triggers, Stpa, Stpb, Stpc, R0 (3 Seconds @8.0K) (ROMless Controller)
W53300 Voice/melody/lcd Controller w/ 16 Com X 48 Seg, up to 1K Notes Melody
W53322 Voice/melody/lcd Controller w/ 32 Com X 48 Seg, up to 1K Notes Melody
W536030A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536030P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536030T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536060A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536060P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536060T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536090A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536090P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536090T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536120A MDPCM Voice/melody W/64x16 ~ 40x8 Lcd, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
W536120P MDPCM Voice/melody W/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 i
W536120T MDPCM Voice/melody W/64x32 ~ 40x16 Lcd, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1
W536A031 MDPCM Voice/melody W/64x16 ~ 40x7 Lcd, 256x4x2 LCD RAM, 1/16 & 1/8 Duty, 1/4 & 1/5 Bias, 32Kx20ROM
W536Q020 MDPCM Voice/melody W/40x16 ~ 16x8 Lcd, 160x4x1 LCD RAM, 1/16 & 1/8 Duty, 1/4& 1/5 Bias, 16Kx20 ROM,

ISD33060P : Single-chip Voice Record/playback Devices

ISD4004-08MEI : Single-chip Voice Record/playback Devices

W39L010Q-90B : 128Kx8

W49F201S-55B : 128Kx16

W49L401TS70B : 256K-16

W562S12 : Speech,Melody Processor,Voice Synthesizer 2 Tone Melody & Adpcm Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (2 Min)

W562S80 : Speech,Melody Processor,Voice Synthesizer 2 Tone Melody & Adpcm Synthesizer w/ 38K IR Carrier, 16I/Os, 1 DAC (2 Min)

W986432DH-5 : 2Mx32

Same catergory

93LC56-IP : 1k/2k/4k 2.0v Microwire Serial EePROM. Single supply with programming operation down to 2.0V (Commercial only) Low power CMOS technology 1 mA active current typical 5 µA standby current (typical) at 3.0V ORG pin selectable memory configuration x 16-bit organization 16-bit organization(93LC66) Self-timed ERASE and WRITE cycles (including auto-erase) Automatic ERAL before WRAL Power on/off.

93LCS66-IP : 2k/4k 2.5v Microwire Serial EePROM With Software Write Protect. 2K/4K 2.5V Microwire® Serial EEPROM with Software Write Protect Single supply with programming operation down to 2.5V Low power CMOS technology 1 mA active current typical 5 µA standby current (typical) 3.0V x16 memory organization 256x16 (93LCS66) Software write protection of user defined memory space Self timed erase and write cycles Automatic ERAL.

AT28BV16 : 16k (2kx8) Battery-voltage(tm) Parallel EePROMs. 8 mA Active Current 50 µA CMOS Standby Current Read Access Time 250 ns Byte Write 3 ms Direct Microprocessor Control ­ DATA Polling ­ READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology ­ Endurance: 100,000 Cycles ­ Data Retention: 10 Years Low Voltage CMOS Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial.

CY7C1355A-100AC : NoBL. Nobl Synchronous SRAM. x 18 Synchronous Flow-Thru SRAM with NoBLTM Architecture Zero Bus Latency, no dead cycles between write and read cycles Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns Fast clock speed: 133, 117, and 100 MHz Fast OE access time: 6.5, 7.0, and 7.5ns Internally synchronized registered outputs eliminate the need to control OE 3.3V ­5% and +5% power supply.

DPS128X16BN3 : 128kx16 High Speed CMOS SRAM. The DPS128X16Cn3/DPS128X16Bn3 High Speed SRAM `'STACK'' modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers (SLCC). Available in straight leaded, `'J'' leaded or gullwing leaded packages, or mounted a 50-pin PGA co-fired ceramic substrate. The module packs 2-Megabits of low-power CMOS.

HYM72V64736BLT8 : ->Unbuffered DIMM. 64Mx64bits PC100 Sdram Unbuffered Dimm Based on 32Mx8 Sdram With Lvttl, 4 Banks & 8K Refresh.

M312L6420ETS : = M312L6420ETS 184Pin Registered Dimm Based on 256Mb E-die (x4, X8) ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = AA,A2,B0,A0 ;; Power = C ;; #of Pin = 184 ;; Component Composition = (64Mx4)x18 ;; Production Status = Mass Production ;; Comments = Low Profile.

M372C1600BT0 : Buffered DIMM. = M372C1600BT0 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)x18+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered.

M372V0805CT0 : Buffered DIMM. = M372V0805CT0 8Mx72 DRAM Dimm With Ecc Using 4Mx16&4Mx4,4KRefresh,3.3V ;; Density(MB) = 64 ;; Organization = 8Mx72 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (4Mx16)x8+(4Mx4)x4 ;; Production Status = Eol ;; Comments = Buffered.

M58LV064A : Advanced Architecture. 64 Mbit (4MB X16 or 2MB X32, Uniform Block, BURST) 3V Supply Flash Memories.

MSM51V18165A : DRAMs and ASMs. 1M X 16 DRAM Edo, 3V.

MT28F160C3 : Low Power. 3V Enhanced+boot Block Flash Memory, 1 Meg X 16 , 46-ball Fbga.

SN74ACT2235FN : 1024 9 2 Asynchronous Bidirectional First-in, First-out Memory. Independent Asynchronous Inputs and Outputs Low-Power Advanced CMOS Technology Bidirectional Dual by 9 Bits Programmable Almost-Full/Almost-Empty Flag Empty, Full, and Half-Full Flags Access Times 25 ns With a 50-pF Load Data Rates to 50 MHz Fall-Through Times 22 ns Maximum High Output Drive for Direct Bus Interface Package Options Include 44-Pin Plastic.

T2316405A : Density = 16M,EDO ;; Org. = 4M X 4 ;; Voltage = 3.3V ;; Speed(ns) = 50/60/70/100 ;; Pins/package = 26/24pin-SOJ,TSOP-II.

TC55VL818FF : SRAM - High Speed NtRAM. Organization = 512Kx18 ;; Speed = 83MHz ;; VDD(V) = 3.3 ;; Functionality = Ntram, Flowthrough Burst ;; Package = 100 LQFP.

TC58FVM5B2A : Organization = 4Mx8 / 2Mx16 ;; Pkg-pins = TSOP-I-48,TFBGA ;; Speed = 65ns/25ns Page ;; VCC = 2.3-3.6 ;; Read Icc Max (mA) = 55 ;; Standby Icc Max (uA) = 10 ;; Boot Block = Bottom ;; Comment =.

K7D321874A : 2Mx18 SRAM The K7D323674A and K7D321874A are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 1,048,576 words by 36 bits for K7D323674A and 2,097,152 words by 18 bits for K7D321874A, fabricated using Samsung's advanced CMOS technology. Single differential HSTL level clock, K and K are used to initiate the read/write.

 
0-C     D-L     M-R     S-Z