Details, datasheet, quote on part number: BF2030E6433
PartBF2030E6433
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionSilicon N-channel MOSFET Tetrode
CompanyInfineon Technologies Corporation
DatasheetDownload BF2030E6433 datasheet
  

 

Features, Applications

ESD: Electrostatic discharge sensitive device, observe handling precaution! Class - 4000V) pin to pin Human Body Model

Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, 94 C Storage temperature Channel temperature

1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Drain-source breakdown voltage = 20 A, 0 V Gate 1 - source breakdown voltage = 10 mA, 0 V, VDS 0 V Gate 2 - source breakdown voltage = 10 mA, 0 V, VDS 0 V Gate 1 source leakage current 0 V, VDS 0 V Gate 2 source leakage current 0 V, VDS 0 V Drain current VDS 4 V Drain-source current VDS 100 k Gate 2-source pinch-off voltage VDS 20 A Gate 1-source pinch-off voltage VDS 0.3 0.5 IDSX 12 0.6 IDSS 6 15 V(BR)DS 10 typ. max.

Electrical Characteristics = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Forward transconductance VDS = 10 mA, 4 V Gate 1 input capacitance VDS = 10 mA, = 1 MHz Output capacitance VDS = 10 mA, = 1 MHz Power gain VDS = 10 mA, = 800 MHz Noise figure VDS = 10 mA, = 800 MHz Gain control range VDS = 800 MHz 1.5 2.2 Gps 20 23 Cdss Cg1ss 2.4 gfs 31 typ. max.


 

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