Details, datasheet, quote on part number: BF1012SE6433
PartBF1012SE6433
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionSilicon N-channel MOSFET Tetrode
CompanyInfineon Technologies Corporation
DatasheetDownload BF1012SE6433 datasheet
  

 

Features, Applications

Operating voltage 12V Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!

Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, 76 C Storage temperature Channel temperature Thermal Resistance

1For calculation of R thJA please refer to Application Note Thermal Resistance
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.

Electrical Characteristics = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage = 300 A, 0 V Gate 1 - source breakdown voltage = 10 mA, 0 V Gate 2 source breakdown voltage = 10 mA, 0 V Gate 1 source current 0 V Gate 2 source leakage current 0 V Drain current VDS 6 V Operating current (selfbiased) VDS 6 V Gate 2-source pinch-off voltage VDS 0.9 I DSO 12 I DSS 8 12 V(BR)DS 16 typ. max.

AC characteristics Forward transconductance (self biased) VDS 6 V Gate 1-input capacitance (self biased) VDS V, VG2S MHz Output capacitance (self biased) VDS V, VG2S MHz Power gain (self biased) VDS VG2S 800 MHz Noise figure (self biased) VDS VG2S 800 MHz Gain control range (self biased) VDS = 800 MHz 50 dB Gps 22 dB Cdss 2.7 pF gfs 30 mS



 

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