Details, datasheet, quote on part number: BF1009SE6433
PartBF1009SE6433
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionSilicon N-channel MOSFET Tetrode
CompanyInfineon Technologies Corporation
DatasheetDownload BF1009SE6433 datasheet
  

 

Features, Applications

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, 76 C Storage temperature Channel temperature

1For calculation of R thJA please refer to Application Note Thermal Resistance
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.

Electrical Characteristics = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage = 300 A, 0 V Gate 1 - source breakdown voltage = 10 mA, 0 V Gate 2 source breakdown voltage = 10 mA, 0 V Gate 1 source current 0 V Gate 2 source leakage current 0 V Drain current VDS 6 V Operating current (selfbiased) VDS 6 V Gate 2-source pinch-off voltage VDS 0.9 I DSS I DSO 8 12 V(BR)DS 16 typ. max.

AC characteristics Forward transconductance (self biased) VDS 6 V Gate 1-input capacitance (self biased) VDS = 1 MHz Output capacitance (self biased) VDS = 1 MHz Power gain (self biased) VDS = 800 MHz Noise figure (self biased) VDS = 800 MHz Gain control range (self biased) VDS = 800 MHz 1.4 50 Gps 22 dB Cdss 2.7 pF gfs 30 mS



 

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