Details, datasheet, quote on part number: BF1005
PartBF1005
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionSilicon N-channel MOSFET Tetrode
CompanyInfineon Technologies Corporation
DatasheetDownload BF1005 datasheet
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Features, Applications

Operating voltage 5V Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!

Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, 76 C Storage temperature Channel temperature

1For calculation of R thJA please refer to Application Note Thermal Resistance
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.

Electrical Characteristics = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage = 650 A, 0 V Gate 1 - source breakdown voltage = 10 mA, 0 V Gate 2 source breakdown voltage = 10 mA, 0 V Gate 1 source current 0 V Gate 2 source leakage current 0 V Drain current VDS 4.5 V Operating current (selfbiased) VDS 4.5 V Gate 2-source pinch-off voltage VDS 1 I DSS I DSO 8 12 V(BR)DS 12 typ. max.

AC characteristics Forward transconductance (self biased) VDS 4.5 V Gate 1-input capacitance (self biased) VDS = 1 MHz Output capacitance (self biased) VDS = 100 MHz Power gain (self biased) VDS = 800 MHz Noise figure (self biased) VDS = 800 MHz Gain control range (self biased) VDS = 800 MHz 1.4 50 Gps 19 dB Cdss 2.5 pF gfs 24 mS



 

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