Details, datasheet, quote on part number: MPSA92RA
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionPNP High Voltage Amplifier
CompanyFairchild Semiconductor
DatasheetDownload MPSA92RA datasheet
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Features, Applications

This device is designed for high voltage driver applications. Sourced from Process 76.

VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA92

*Device mounted on FR-4 PCB X 0.06." **Device mounted on FR-4 PCB X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current = 1.0 mA, = 0 VCB = 0 VEB V A

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

fT Ccb Current Gain - Bandwidth Product Collector-Base Capacitance = 10 mA, VCE = 100 MHz VCB = 1.0 MHz 50 6.0 MHz pF

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.



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