|Category||Discrete => Transistors => Bipolar => Darlington => PNP|
|Description||Small Signal Transistor|
|Datasheet||Download MPSA65 datasheet
|Cross ref.||Similar parts: MPSA64|
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA65
*Device mounted on FR-4 PCB X 0.06." **Device mounted on FR-4 PCB X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
V (BR)CES I CBO I EBO Collector-Em itter Breakdown Voltage Collector-Cutoff Current Em itter-Cutoff Current V nA
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage = 10 mA, VCE = 100 mA, VCE = 100 mA, = 100 mA, VCE 5.0 V*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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