Details, datasheet, quote on part number: MPSA28
PartMPSA28
CategoryDiscrete => Transistors => Bipolar => Darlington => NPN
DescriptionNPN Darlington Transistor
CompanyFairchild Semiconductor
DatasheetDownload MPSA28 datasheet
Cross ref.Similar parts: LP395
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Features, Applications

This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.

VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA28

*Device mounted on FR-4 PCB X 0.06." **Device mounted on FR-4 PCB X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current = 100 A, VBE = 100 A, = 10 A, = 0 VCB = 0 VCE 60 V, VBE = 0 VEB V nA

hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage = 10 mA, VCE = 100 mA, VCE = 10 mA, = 100 mA, = 100 mA, VCE 5.0 V

fT Cobo Current Gain - Bandwidth Product Output Capacitance = 10 mA, VCE = 100 MHz VCB = 1.0 MHz 125 8.0 MHz pF

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Typical Pulsed Current Gain vs Collector Current

Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base

 

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