Details, datasheet, quote on part number: IRFU220A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description4.6A, 200V, 0.800 Ohm, N-channel Power MOSFETs
CompanyFairchild Semiconductor
DatasheetDownload IRFU220A datasheet
Cross ref.Similar parts: IRFU220B
Find where to buy


Features, Applications

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9600.


4.6A, 200V rDS(ON) = 0.800 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings = 25oC, Unless Otherwise Specfied

Drain to Source Voltage (Note 1). VDS Drain to Gate Voltage (RGS = 20k) (Note 1). VDGR Continuous Drain Current. 100oC. ID Pulsed Drain Current (Note 3). IDM Gate to Source Voltage. VGS Maximum Power Dissipation. PD Linear Derating Factor. Single Pulse Avalanche Energy Rating (Note 4). EAS Operating and Storage Temperature. TJ, TSTG Maximum Temperature for Soldering Leads 0.063in (1.6mm) from Case for 10s. TL Package Body for 10s, See Techbrief 334. Tpkg 300 260 UNITS W/oC mJ oC

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Drain Lead, 6.0mm (0.25in) From Package to Center of Die Measured From the Source Lead, 6.0mm (0.25in) From Package to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances

TEST CONDITIONS = 250µA, VGS = 0V, (Figure 10) VGS = VDS = 250µA VDS = Rated BVDSS , VGS = 0V VDS 0.8 x Rated BVDSS , VGS = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V, (Figure 7) VGS = 2.4A, VGS = 10V, (Figures 8, 9) VDS = 2.4A, (Figure 12) VDD ID 4.6A, RGS 18 , VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 4.6A, VDS 0.8 x Rated BVDSS , Ig(REF) = 1.5mA, (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 1MHz, (Figure 11)

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

2. Pulse test: pulse width 300µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting = 50, peak IAS = 4.6A.




Some Part number from the same manufacture Fairchild Semiconductor
IRFU220B 200V N-channel B-FET / Substitute of IRFU220 & IRFU220A
IRFU224A Advanced Power MOSFET
IRFU224B 250V N-channel B-FET / Substitute of IRFU224 & IRFU224A
IRFU230A Advanced Power MOSFET
IRFU230B 200V N-channel B-FET / Substitute of IRFU230A
IRFU234B 250V N-channel B-FET / Substitute of IRFU234A
IRFU310B 400V N-channel B-FET / Substitute of IRFU310 & IRFU310A
IRFU320A Advanced Power MOSFET
IRFU320B 400V N-channel B-FET / Substitute of IRFU320 & IRFU320A
IRFU330B 400V N-channel B-FET / Substitute of IRFU330A
IRFU410A Advanced Power MOSFET
IRFU410B 520V N-channel MOSFET
IRFU420A Advanced Power MOSFET
IRFU420B 500V N-channel B-FET / Substitute of IRFU420 & IRFU420A
IRFU430B 500V N-channel B-FET / Substitute of IRFU430A
IRFU9120 Discrete Commercial P-channel Power MOSFET, -100V, 5.6A, 0.600 Ohms @ VGS=-10V, TO-251/IPAK Package
IRFW/I510A Advanced Power MOSFET
IRFW/I520A Advanced Power MOSFET: 100v, 9.2a
IRFW/I530A Advanced Power MOSFET: 100v, 14a
IRFW/I540A Advanced Power MOSFET: 100v, 28a
IRFW/I550A Advanced Power MOSFET: 100v, 40a

DM74LS165WMX : Bipolar->LS Family 8-Bit Parallel In/serial Out Shift Register

FAN1585AM15X : 5A Adjustable/fixed Low Dropout Linear Regulator

KA431LZTF : Programmable Shunt Regulator

FDD120AN15A : N-channel Powertrench Mosfet

FM25C041 : 4k-bit Spi˘â Interface Serial CMOS Eeprom

KA3162 : Single IGBT Gate Driver

FIN24C_06 : Userdes˘âlow-voltage 24-bit Bi-directional Serializer/deserializer

FSB6714 : Transistor (bjt) - Single Discrete Semiconductor Product - 30V - NPN; BIP NPN PWR 30V 3-SSOT Specifications: Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 30V ; Current - Collector (Ic) (Max): - ; Power - Max: - ; DC Current Gain (hFE) (Min) @ Ic, Vce: - ; Vce Saturation (Max) @ Ib, Ic: - ; Frequency - Transition: - ; Current - Collector Cutoff (Max): - ; Mounting Type

KSC1623OMTF : Transistor (bjt) - Single Discrete Semiconductor Product 100mA 50V 200mW NPN; TRANSISTOR NPN 50V 100MA SOT-23 Specifications: Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 200mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA ; Frequency - Transition: 250MHz ; Current -

KSA1150YTA : Transistor (bjt) - Single Discrete Semiconductor Product 500mA 20V 300mW PNP; TRANSISTOR PNP 20V 0.5A TO-92S Specifications: Transistor Type: PNP ; Voltage - Collector Emitter Breakdown (Max): 20V ; Current - Collector (Ic) (Max): 500mA ; Power - Max: 300mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V ; Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA ; Frequency - Transition: - ; Current - C

74VCX16374MTDX : ALVC/VCX/A SERIES, DUAL 8-BIT DRIVER, TRUE OUTPUT, PBGA54 Specifications: Technology: CMOS ; Device Type: Line / Bus Driver ; Supply Voltage: 1.5V ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Package Type: 5.50 MM, PLASTIC, MO-205, FBGA-54 ; Pins: 54

FDMS8018 : MOSFET N-CH 30V 30A 8PQFN Fairchild Semiconductor PowerTrench® MOSFET technology enables high power density for high-efficiency solutions providing the lowest RDS(ON) available, improved FOM and lower power dissipation. Features Superior switching performance and low switching noise Lower switch node

0-C     D-L     M-R     S-Z