Details, datasheet, quote on part number: IRFS820B
Description500V N-channel B-FET / Substitute of IRFS820 & IRFS820A
CompanyFairchild Semiconductor
DatasheetDownload IRFS820B datasheet
Cross ref.Similar parts: IRF822FI, IRFI820G, IRFS820A, STP5NA50FI, STP4NK50ZFP
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Features, Applications

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.


2.5A, 500V, RDS(on) = 2.6 @VGS 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. Typ 0.5 62.5 Max 3.74 -62.5 Units C/W

BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 250 A, Referenced to 25C VDS 500 V, VGS 0 V VDS = 125C VGS 30 V, VDS 0 V VGS -30 V, VDS V/C A nA

VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, 250 A VGS 1.25 A VDS 1.25 A

Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS 25 V, VGS = 1.0 MHz pF

td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS 2.5 A, VGS 10 V

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS 2.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS 2.5 A, dIF = 100 A/s

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature = 58mH, IAS = 2.5A, VDD 25 , Starting 25C 3. ISD 2.5A, di/dt 300A/s, VDD BVDSS, Starting 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature


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