Details, datasheet, quote on part number: IRFS650A
PartIRFS650A
Category
DescriptionAdvanced Power Mosfet
CompanyFairchild Semiconductor
DatasheetDownload IRFS650A datasheet
Cross ref.Similar parts: CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS, CSD19503KCS, CSD19506KCS
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Features, Applications
FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current C ) Continuous Drain Current oC ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds

Symbol RJC RJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.51 62.5 Units

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units --nC V nA

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET diF/dt=100A/µ s

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction R =27, Starting J 3 ISD< _320A/ µs, < _32A, di/dt < _BVDSS , Starting 2% 4 Pulse Test : Pulse Width s, µ Duty Cycle < O Essentially Independent of Operating Temperature 5 O



 

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