Details, datasheet, quote on part number: IRFS610A
DescriptionAdvenced Power Mosfet (n-channel)
CompanyFairchild Semiconductor
DatasheetDownload IRFS610A datasheet
Cross ref.Similar parts: CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18537NKCS, CSD18542KCS, CSD19503KCS, CSD19506KCS, CSD19531KCS
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Features, Applications

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds

Symbol RJC RJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 5.71 62.5 Units

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( " Miller " ) Charge Min. Typ. Max. Units --nC pF A

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET diF/dt=100A/ s

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction G=27 , Starting O 3 ISD < _140A/ s, _ 3.3A, di/dt < _ BVDSS , Starting _ 2% Pulse Test : Pulse Width 250 4 s, Duty Cycle < O Essentially Independent of Operating Temperature 5 O


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