Details, datasheet, quote on part number: IRFS540A
PartIRFS540A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description100V N-channel A-FET / Substitute of IRFS540
CompanyFairchild Semiconductor
DatasheetDownload IRFS540A datasheet
Cross ref.Similar parts: CSD18502KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS, CSD19503KCS, CSD19506KCS, CSD19531KCS
Quote
Find where to buy
 
  

 

Features, Applications
FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)

Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation C )

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Symbol R JA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 3.8 62.5 Units

Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units --nC V nA

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET diF/dt=100A/ s

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction G=27 , Starting O 3 ISD _ 400A/ s, V DD< _ 28A, di/dt < _ BVDSS , Starting O _2% Pulse Test : Pulse Width 250 s, Duty Cycle Essentially Independent of Operating Temperature 5 O



 

Some Part number from the same manufacture Fairchild Semiconductor
IRFS550A 100V N-channel A-FET
IRFS610A Advanced Power MOSFET (not Recommended For New Designs)
IRFS610B 200V N-channel B-FET / Substitute of IRFS610 & IRFS610A
IRFS614B 250V N-channel B-FET / Substitute of IRFS614 & IRFS614A
IRFS620A Advanced Power MOSFET (not Recommended For New Designs)
IRFS620B 200V N-channel B-FET / Substitute of IRFS620 & IRFS620A
IRFS624B 250V N-channel B-FET / Substitute of IRFS624 & IRFS624A
IRFS630A Advanced Power MOSFET (not Recommended For New Designs)
IRFS630B 200V N-channel B-FET / Substitute of IRFS630 & IRFS630A
IRFS634B 250V N-channel B-FET / Substitute of IRFS634 & IRFS634A
IRFS640A Advanced Power MOSFET (not Recommended For New Designs)
IRFS640B 200V N-channel B-FET / Substitute of IRFS640 & IRFS640A
IRFS644B 250V N-channel B-FET / Substitute of IRFS644 & IRFS644A
IRFS650A Advanced Power MOSFET (not Recommended For New Designs)
IRFS650B 200V N-channel B-FET / Substitute of IRFS650A
IRFS654B 250V N-channel B-FET / Substitute of IRFS654A
IRFS710A Advanced Power MOSFET (not Recommended For New Designs)
IRFS710B 400V N-channel B-FET / Substitute of IRFS710 & IRFS710A
IRFS720A Advanced Power MOSFET (not Recommended For New Designs)
IRFS720B 400V N-channel B-FET / Substitute of IRFS720 & IRFS720A
IRFS730A Advanced Power MOSFET (not Recommended For New Designs)

1.5KE47CA : 1500 Watt Transient Voltage Suppressors

74VHCT574CW : Quad 2-Input NAND Gate

FM27C512N55L : 512K-Bit (64K X 8) High Performance CMOS EPROM

FOD2200T : 8-PIN Dip Low Input Current Logic Gate Optocouplerthe FOD2200 is an Optically Coupled Logic Gate That Combine an Algaas Led And an Integrated High Gain Photo Detector. The Detector Has a Three State Output Stage And Has a Detector Threshold With Hysteresis. The Three State Output Eliminates Th

FQPF11N40C : 400V N-channel Advance QFET C-series

KH200HXA : 95 Mhz, Hybrid op Amp

MC7809CD2TR4 : 1A, 9V, Positive Voltage Regulator

QTLP650C-5 : Pure Green Surface Mount Led Lamp (1206) Chip Type - Water Clear

NM24W16UFTLZVM8 : 16k-bit Serial Eeprom 2-wire Bus Interface

FFPF30UP20DP : Ultrafast Recovery Power Rectifier

4N28SD : General Purpose 6-pin Phototransistor Optocouplers

BC183_J35Z : Transistor (bjt) - Single Discrete Semiconductor Product 100mA 30V 350mW NPN; TRANS BIPO GP NPN 30V 100MA TO-9 Specifications: Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 30V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 350mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10A, 5V ; Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA ; Frequency - Transition: 150MHz ; Current -

Same catergory

BSN10 : DMOS/Vertical Enhancement N-Channel. BSN10; BSN10A; N-channel Enhancement Mode Vertical D-mos Transistors.

H7N0312AB : for General Switching. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

HSMBJSAC10 : Low Capacitance TVS. Low Capacitance Tvs, Package : (none). The SAC series is a low capacitance transient voltage suppressor (TVS) in a modified DO-214AA package rated at 500 Watts, providing board-level protection for data or signal lines. The low capacitance 50 pF minimizes the amount of signal loss or deformation up through 70 MHz. If bi-directional protection is needed, two devices in anti-parallel configuration.

SB101G : Glass Passivated. Pakage = SB-10 ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 10 ;; Ifsm (A)= 175.

Si8451DB : P-Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET. APPLICATIONS Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection Device Marking: 8451 xxx = Date/Lot Traceability Code Ordering Information: Si8451DB-T2-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage 25 C Continuous Drain Current (TJ = 150 C) 70 C Pulsed.

ADT4-1T-2 : 0.2 MHz - 350 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -55 to 100 C (-67 to 212 F).

ER3AT/R13 : 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB. s: Package: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 3000 mA ; trr: 0.0350 ns ; RoHS Compliant: RoHS.

ESM4045AV : 42 A, 450 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN.

F3L30R06W1E3-B11 : 45 A, 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: MODULE-20 ; Number of units in IC: 4.

FMI06N60ES : 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 1.2 ohms ; PD: 1670 milliwatts ; Package Type: T-PACK(L), 3 PIN ; Number of units in IC: 1.

MC043A180DAA : CAPACITOR, CERAMIC, MULTILAYER, 25 V, C0G, 0.000018 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.80E-5 microF ; Capacitance Tolerance: 3 (+/- %) ; WVDC: 25 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Through Hole ; Operating.

MIMMG450WB060B6N : IGBT. s: Transistor Type / Technology: IGBT. Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder SMPS and UPS Induction Heating Symbol IGBT VCES VGES IC Collector - Emitter Voltage Gate - Emitter Voltage DC Collector Current TC=60C, tp=1ms Parameter TC=25C unless otherwise specified Test.

MMX-EC2A103JTF : CAPACITOR, METALLIZED FILM, POLYPHENYLENE SULPHIDE, 100 V, 0.01 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: POLYPHENYLENE SULPHIDE ; RoHS Compliant: Yes ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts.

MUR405-AP : 4 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD. s: Package: ROHS COMPLIANT PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 4000 mA ; trr: 0.0450 ns ; RoHS Compliant: RoHS.

RH025100R0AC02 : RESISTOR, WIRE WOUND, 25 W, 0.05 %, 20 ppm, 100 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis ; Resistance Range: 100 ohms ; Tolerance: 0.0500 +/- % ; Temperature Coefficient: 20 ±ppm/°C ; Power Rating: 25 watts (0.0335 HP) ; Operating Temperature: -55 to 250 C (-67.

2SD1592-K : 5 A, 300 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC PACKAGE-3.

 
0-C     D-L     M-R     S-Z