Details, datasheet, quote on part number: IRFS530A
PartIRFS530A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description100V N-channel A-FET / Substitute of IRFS530
CompanyFairchild Semiconductor
DatasheetDownload IRFS530A datasheet
Cross ref.Similar parts: CSD18502KCS, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18542KCS, CSD19503KCS, CSD19506KCS, CSD19531KCS
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Features, Applications
FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)

Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation C )

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Symbol R JA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 4.69 62.5 Units

Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units --nC µA V Test Condition VGS=0V,ID=250 µA See Fig µA V

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET diF/dt=100A/ µs

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction G=27 , Starting O 3 ISD _ 350A/ µs, V DD< _ 14A, di/dt < _ BVDSS , Starting O _2% Pulse Test : Pulse Width 250 s, Duty Cycle Essentially Independent of Operating Temperature 5 O



 

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