Details, datasheet, quote on part number: IRFRU110A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionAdvanced Power MOSFET: 100v, 4.7a
CompanyFairchild Semiconductor
DatasheetDownload IRFRU110A datasheet


Features, Applications

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current C ) Continuous Drain Current C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation ) *

Total Power Dissipation C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Symbol R JA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 50 110

* When mounted on the minimum pad size recommended (PCB Mount).

Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units --nC µA V Test Condition µ A See Fig A V

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET µ s

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction G=27 , Starting O 3 ISD _ 5.6A, di/dt < _ BVDSS , Starting O _2% Pulse Test : Pulse Width 250 s, Duty Cycle Essentially Independent of Operating Temperature 5 O


Some Part number from the same manufacture Fairchild Semiconductor
IRFRU120A Advanced Power MOSFET: 100v, 8.4a
IRFRU130A Advanced Power MOSFET: 100v, 13a
IRFRU210A Advanced Power MOSFET: 200v, 2.7a
IRFRU220A Advanced Power MOSFET: 200v, 4.6a
IRFRU230A Advanced Power MOSFET: 200v, 7.5a
IRFS140A 100V N-channel A-FET / Substitute of IRFS140
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IRFS350A 400V N-channel A-FET / Substitute of IRFS350
IRFS440A Advanced Power MOSFET (not Recommended For New Designs)
IRFS440B 500V N-channel B-FET / Substitute of IRFS440 & IRFS440A
IRFS450A Advanced Power MOSFET (not Recommended For New Designs)

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